Literature DB >> 28985005

On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics.

Jihang Lee1,2, Wei D Lu1.   

Abstract

Rapid advances in the semiconductor industry, driven largely by device scaling, are now approaching fundamental physical limits and face severe power, performance, and cost constraints. Multifunctional materials and devices may lead to a paradigm shift toward new, intelligent, and efficient computing systems, and are being extensively studied. Herein examines how, by controlling the internal ion distribution in a solid-state film, a material's chemical composition and physical properties can be reversibly reconfigured using an applied electric field, at room temperature and after device fabrication. Reconfigurability is observed in a wide range of materials, including commonly used dielectric films, and has led to the development of new device concepts such as resistive random-access memory. Physical reconfigurability further allows memory and logic operations to be merged in the same device for efficient in-memory computing and neuromorphic computing systems. By directly changing the chemical composition of the material, coupled electrical, optical, and magnetic effects can also be obtained. A survey of recent fundamental material and device studies that reveal the dynamic ionic processes is included, along with discussions on systematic modeling efforts, device and material challenges, and future research directions.
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  magnetoelectric effect; memristive systems; neuromorphic computing; plasmonic switching; resistive switching

Year:  2017        PMID: 28985005     DOI: 10.1002/adma.201702770

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  6 in total

1.  Sputtered Electrolyte-Gated Transistor with Temperature-Modulated Synaptic Plasticity Behaviors.

Authors:  Yang Ming Fu; Hu Li; Tianye Wei; Long Huang; Faricha Hidayati; Aimin Song
Journal:  ACS Appl Electron Mater       Date:  2022-05-18

Review 2.  Ion-Movement-Based Synaptic Device for Brain-Inspired Computing.

Authors:  Chansoo Yoon; Gwangtaek Oh; Bae Ho Park
Journal:  Nanomaterials (Basel)       Date:  2022-05-18       Impact factor: 5.719

3.  Stability-Enhanced Resistive Random-Access Memory via Stacked In x Ga1-x O by the RF Sputtering Method.

Authors:  Wei-Lun Huang; Yong-Zhe Lin; Sheng-Po Chang; Wei-Chih Lai; Shoou-Jinn Chang
Journal:  ACS Omega       Date:  2021-04-13

4.  Crystal-confined freestanding ionic liquids for reconfigurable and repairable electronics.

Authors:  Naiwei Gao; Yonglin He; Xinglei Tao; Xiao-Qi Xu; Xun Wu; Yapei Wang
Journal:  Nat Commun       Date:  2019-02-01       Impact factor: 14.919

5.  Fiber-Shaped Triboiontronic Electrochemical Transistor.

Authors:  Jinran Yu; Shanshan Qin; Huai Zhang; Yichen Wei; Xiaoxiao Zhu; Ya Yang; Qijun Sun
Journal:  Research (Wash D C)       Date:  2021-04-26

6.  Unraveling the Role of Polydopamines in Resistive Switching in Al/Polydopamine/Al Structure for Organic Resistive Random-Access Memory.

Authors:  Jonghyeon Yun; Daewon Kim
Journal:  Polymers (Basel)       Date:  2022-07-24       Impact factor: 4.967

  6 in total

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