| Literature DB >> 28983115 |
Ignacio Piquero-Zulaica1, Jorge Lobo-Checa2,3, Ali Sadeghi4, Zakaria M Abd El-Fattah5, Chikahiko Mitsui6, Toshihiro Okamoto7,8, Rémy Pawlak9, Tobias Meier9, Andrés Arnau1,10,11, J Enrique Ortega1,10,12, Jun Takeya6, Stefan Goedecker9, Ernst Meyer9, Shigeki Kawai13,14,15.
Abstract
Quantum dots are known to confine electrons within their structure. Whenever they periodically aggregate into arrays and cooperative interactions arise, novel quantum properties suitable for technological applications show up. Control over the potential barriers existing between neighboring quantum dots is therefore essential to alter their mutual crosstalk. Here we show that precise engineering of the barrier width can be experimentally achieved on surfaces by a single atom substitution in a haloaromatic compound, which in turn tunes the confinement properties through the degree of quantum dot intercoupling. We achieved this by generating self-assembled molecular nanoporous networks that confine the two-dimensional electron gas present at the surface. Indeed, these extended arrays form up on bulk surface and thin silver films alike, maintaining their overall interdot coupling. These findings pave the way to reach full control over two-dimensional electron gases by means of self-assembled molecular networks.Arrays of quantum dots can exhibit a variety of quantum properties, being sensitive to their spacing. Here, the authors fine tune interdot coupling using hexagonal molecular networks in which the dots are separated by single or double haloaromatic compounds, structurally identical but for a single atom.Entities:
Year: 2017 PMID: 28983115 PMCID: PMC5629208 DOI: 10.1038/s41467-017-00872-2
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1QD arrays generated by single-wall (SW) and double-wall (DW) nanoporous networks that confine the surface 2DEG. a, b Schematic representations of the concept behind SW and DW networks. c, d Chemical structures and electrostatic potential maps of Br-DNT and Br-DNF. e, f Large-scale STM topographies for the SW network with Br-DNT and the DW network with Br-DNF. Insets show close-views of each network. g, h High resolution atomic force microscopy (AFM) images of the SW network and DW network. Measurement parameters: tunneling current I = 5 pA, bias voltage V = 200 mV (e, f); V = 0 mV, oscillation amplitude A = 60 pm (g, h).
Fig. 2Local electronic structure of the SW and DW networks. a Conductance (dI/dV) spectra on the pristine Ag(111) (black), on the pore centers of the SW network (red) and DW network (green). b, c dI/dV maps on the SW and DW networks acquired on the peak maxima in a, enlarged in the corresponding insets. Measurement parameters: I = 10 pA, V = 72 mV, modulation voltage V ac = 10 mV, oscillation frequency f ac = 513 Hz (b); I = 10 pA, V = 45 mV, V ac = 10 mV, f ac = 515 Hz (c).
Fig. 32DEG modification induced by the SW and DW network potential barriers. a–c ARPES map along , obtained on the 3ML Ag/Au(111) as well as on the SW and DW networks. The energy distribution curves close to were fitted, using a Lorentzian component and a linear background convoluted with a Fermi function (black dashed lines). d–f Second derivative maps of the above raw data for an improved visualization of the second surface Brillouin Zone. The white dashed lines correspond to the EBEM calculated electronic bands stemming from altering the 2DEG with the molecular surface potentials.
Extracted ARPES experimental parameters from the bands presented in Fig. 3
| 3 ML Ag film | SW/Ag film | DW/Ag film | |
|---|---|---|---|
| Band bottom | −160 meV | −120 meV | −110 meV |
| Band width | — | 92 meV | 51 meV |
|
| — | 0.120 Å−1 | 0.104 Å−1 |
| Interpore distance | — | 3.02 nm | 3.49 nm |
| (3.03 nm) | (3.45 nm) | ||
|
| 0.38 | 0.47 | 0.59 |
The interpore distance match, within the experimental error, that obtained by DFT calculations (values in parentheses)
Fig. 4EBEM simulations of the local electronic structure. Calculated dI/dV spectra, obtained after fitting the experimental data with EBEM. The ARPES fit was shifted by 100 meV for direct comparison with the dI/dV spectra in Fig. 2a. Insets show both molecular geometries used in EBEM calculations that closely match the STM topographies (Fig. 1e, f) and DFT calculated electric field profiles (Supplementary Fig. 3).