Literature DB >> 28967933

The impact of nitrogen doping and reduced-niobium self-doping on the photocatalytic activity of ultra-thin Nb3O8- nanosheets.

Yannan Zhou1, Ting Wen, Weiqian Kong, Baocheng Yang, Yonggang Wang.   

Abstract

Nitrogen doping via high-temperature ammonization is a frequently used strategy to extend the light harvesting capacity of wide-bandgap catalysts in the visible region. Under such a reductive atmosphere, the reduction of transition metals is supposed to occur, however, this has not been thoroughly studied yet. Here, by combining chemically-controlled doping and subsequent liquid exfoliation, ultra-thin [Nb3O8]- nanosheets with separate N doping, reduced-Nb doping and N/reduced-Nb codoping were fabricated for comparative studies on the doping effect for photocatalytic hydrogen evolution. Layered KNb3O8 was used as the starting material and the above-mentioned three doping conditions were achieved by high-temperature treatment with urea, hydrogen and ammonia, respectively. The morphology, crystal and electronic structures, and the catalytic activity of the products were characterized thoroughly by means of TEM, AFM, XRD, XPS, EPR, absorption spectroscopy and photocatalytic hydrogen evolution. Significantly, the black N/reduced-Nb co-doped monolayer [Nb3O8]- nanosheets exhibit the mostly enhanced photocatalytic hydrogen generation rate, indicating a synergistic doping effect of the multiple chemical-design strategy. The modified electronic structure of [Nb3O8]- nanosheets and the role of exotic dopants in bandgap narrowing are put forward for the rational design of better photocatalysts with reduced-metal self-doping.

Entities:  

Year:  2017        PMID: 28967933     DOI: 10.1039/c7dt03006a

Source DB:  PubMed          Journal:  Dalton Trans        ISSN: 1477-9226            Impact factor:   4.390


  2 in total

Review 1.  Nb2O5-Based Photocatalysts.

Authors:  Kaiyi Su; Huifang Liu; Zhuyan Gao; Paolo Fornasiero; Feng Wang
Journal:  Adv Sci (Weinh)       Date:  2021-02-22       Impact factor: 16.806

2.  Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping.

Authors:  Jing Xu; Yuanyuan Zhu; Yong Liu; Hongjun Wang; Zhaorui Zou; Hongyu Ma; Xianke Wu; Rui Xiong
Journal:  Nanomaterials (Basel)       Date:  2022-03-21       Impact factor: 5.076

  2 in total

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