Loss reduction of silicon-on-insulator waveguides for deep mid-infrared applications.

We report that propagation loss of optical waveguides based on a silicon-on-insulator (SOI) material platform can be greatly reduced. Our simulations show that the loss, including SiO2 absorption and substrate leakage, but no scattering loss, is 0.024 and 0.53 dB/cm in the deep mid-infrared at 4.8 and 7.1 μm wavelengths, where the material absorption in SiO2 is 100 and 1000 dB/cm, respectively. The loss becomes negligible, compared to scattering loss in Si waveguides. This is enabled by using the TE10 mode in a pedestal waveguide. We also show that the TE10 mode can be excited in the proposed waveguide by the fundamental mode with a coupling efficiency of >94%. Low propagation loss, high coupling efficiency, and fabrication-friendly design would make it promising for practical use of SOI devices in the deep mid-infrared.