| Literature DB >> 28939827 |
Zheng Xie1, Zhengmao Yin2,3, Yongzhong Wu2, Chunyan Liu4, Xiaopeng Hao5, Qingqing Du1,2, Xiangang Xu2,6.
Abstract
A search for new phosphor materials that exhibit high light-emission, spectral purity, long-time stability and processability capture particular attention to modern solid-state lighting. Here, polymerizable silane pre-functionalized carbon dot (SiCD) fluids were dripped and co-polymerized or completely bulk polymerized to build color conversion and encapsulation coatings of commercially available GaN blue LEDs. Most parameters of SiCD-based white LEDs were similar to or even better than those of phosphor-based white LEDs, particularly the insensitivity to excitation wavelength and working current. Thus, SiCDs were superior to those phosphors in terms of broadband properties, high transparency (no light blocking and leaking), as well as arbitrary doping of its content as color conversion and encapsulation layers simultaneously, unique solubility, flexible chemical, optical and mechanical processability. Thus, designing new CD-based white LEDs, instead of inorganic rare earth phosphor-based LEDs, is possible for better performance solid state lighting devices.Entities:
Year: 2017 PMID: 28939827 PMCID: PMC5610343 DOI: 10.1038/s41598-017-12083-2
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Structures of SiCD-based WLED. Schematic diagrams of chemical (left) and device structures (right) of self-polymerized silane-functionalized carbon dot layers on GaN LED.
Figure 2Photographs of LEDs. (a–c) The top view and (d–f) EL photographs at 350 mA of (a,d) SiCDs coated white LED, (b,e) bare and (c,f) phosphor white LED based on blue GaN-based LED.
Figure 3EL spectra of WLEDs. (a) Absolute EL spectra of WLEDs based on phosphor and SiCD 1–4 prepared by different silanes; (b) Absolute EL spectra of WLEDs based on SiCD 1a–1i with different preparation conditions (carbon source ratio and pyrolysis reaction time as shown in Table 1).
The preparing factors and spectral performances of SiCDs excited by 360 nm UV light and the SiCD-WLEDs excited by 456 nm LED at 350 mA current.
| CDs | 1a | 1b | 1c | 1d | 1e | 1f | 1g | 1h | 1i | 2 | 3 | 4 | Phoshpor |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Amount of citric acid and reaction time | 0.5 g 1 min | 0.5 g 30 min | 0.5 g 60 min | 1 g 1 min | 1 g 5 min | 1 g 30 min | 1 g 60 min | 1.5 g 1 min | 1.5 g 30 min | 1 g 5 min | 1 g 5 min | 1 g 5 min | — |
| PL peaks (nm) excited by 360 nm UV light | 437 | 439 | 442 | 439 | 440 | 442 | 445 | 442 | 443 | 440 | 443 | 435 | |
| QY (%) | 45 | 40 | 32 | 50 | 48 | 39 | 25 | 30 | 28 | 49 | 55 | 43 | |
| Emission peaks (nm) excited by 456 nm LED | 542 | 544 | 543 | 541 | 541 | 545 | 549 | 542 | 548 | 553 | 539 | 538 | 550 |
| FWHM (nm) | 108 | 111 | 104 | 98 | 102 | 103 | 110 | 104 | 111 | 111 | 94 | 97 | 124 |
| Luminous efficiency (lm/W) | 46.07 | 54.17 | 15.85 | 70.93 | 68.1 | 49.71 | 26.06 | 44.69 | 22.03 | 73.39 | 79.39 | 50.88 | 108.86 |
| Tc (K) | 8248 | 4739 | 7926 | 6228 | 9234 | 6009 | 5577 | 6866 | 5789 | 4455 | 6432 | 5553 | 5579 |
| Ra | 67 | 60 | 66.2 | 58.2 | 67.1 | 61.3 | 64.9 | 64.3 | 66.8 | 59.9 | 57.2 | 58.4 | 70.1 |
| Light conversion efficiency η (%) | 27.1 | 8.3 | 32.4 | 39.2 | 38.5 | 25.9 | 13.5 | 24.9 | 12.1 | 16.5 | 42.8 | 27.6 | 72.9 |
Figure 4Arbitrarily doped SiCDs. (a) Optical photographs of a series of arbitrarily doped (0–100 wt% scale) SiCDs upon visible light (top), 365 nm (middle) UV and 254 nm (bottom) UV light illuminations. (b) EL spectra of SiCD white LEDs under various doping volume fractions with methyltriethoxysilane (40–100 wt%). TEM images showing the distribution of SiCDs in coatings. (c) close to the edge of the film cross-section on TEM grid, and (d) an exemplary location at an inner point across the thickness of cross-section, as is repeated at other locations (scale bar = 5 and 2 nm).
Figure 5The optical performance of WLED. (a) Absolute EL spectra and (b) luminous efficiency of SiCD 3 based WLED under various forward currents (50–500 mA).