Literature DB >> 28915758

Co-adsorption of water and oxygen on GaN: Effects of charge transfer and formation of electron depletion layer.

Qi Wang1, Ajinkya Puntambekar1, Vidhya Chakrapani1.   

Abstract

Species from ambient atmosphere such as water and oxygen are known to affect electronic and optical properties of GaN, but the underlying mechanism is not clearly known. In this work, we show through careful measurement of electrical resistivity and photoluminescence intensity under various adsorbates that the presence of oxygen or water vapor alone is not sufficient to induce electron transfer to these species. Rather, the presence of both water and oxygen is necessary to induce electron transfer from GaN that leads to the formation of an electron depletion region on the surface. Exposure to acidic gases decreases n-type conductivity due to increased electron transfer from GaN, while basic gases increase n-type conductivity and PL intensity due to reduced charge transfer from GaN. These changes in the electrical and optical properties, as explained using a new electrochemical framework based on the phenomenon of surface transfer doping, suggest that gases interact with the semiconductor surface through electrochemical reactions occurring in an adsorbed water layer present on the surface.

Entities:  

Year:  2017        PMID: 28915758     DOI: 10.1063/1.4991322

Source DB:  PubMed          Journal:  J Chem Phys        ISSN: 0021-9606            Impact factor:   3.488


  1 in total

1.  GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope.

Authors:  Wenjun Li; Matt D Brubaker; Bryan T Spann; Kris A Bertness; Patrick Fay
Journal:  IEEE Electron Device Lett       Date:  2017-12-21       Impact factor: 4.187

  1 in total

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