Literature DB >> 28872318

Topological Defects in Hexagonal Manganites: Inner Structure and Emergent Electrostatics.

Megan E Holtz, Konstantin Shapovalov1, Julia A Mundy2, Celesta S Chang, Zewu Yan3,4, Edith Bourret4, David A Muller5, Dennis Meier6, Andrés Cano1.   

Abstract

Diverse topological defects arise in hexagonal manganites, such as ferroelectric vortices, as well as neutral and charged domain walls. The topological defects are intriguing because their low symmetry enables unusual couplings between structural, charge, and spin degrees of freedom, holding great potential for novel types of functional 2D and 1D systems. Despite the considerable advances in analyzing the different topological defects in hexagonal manganites, the understanding of their key intrinsic properties is still rather limited and disconnected. In particular, a rapidly increasing number of structural variants is reported without clarifying their relation, leading to a zoo of seemingly unrelated topological textures. Here, we combine picometer-precise scanning-transmission-electron microscopy with Landau theory modeling to clarify the inner structure of topological defects in Er1-xZrxMnO3. By performing a comprehensive parametrization of the inner atomic defect structure, we demonstrate that one primary length scale drives the morphology of both vortices and domain walls. Our findings lead to a unifying general picture of this type of structural topological defects. We further derive novel fundamental and universal properties, such as unusual bound-charge distributions and electrostatics at the ferroelectric vortex cores with emergent U(1) symmetry.

Entities:  

Keywords:  Ferroics; domain walls; ferroelectric vortices; topological defects

Year:  2017        PMID: 28872318     DOI: 10.1021/acs.nanolett.7b01288

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  3 in total

1.  Interface reconstruction with emerging charge ordering in hexagonal manganite.

Authors:  Shaobo Cheng; Changsong Xu; Shiqing Deng; Myung-Geun Han; Shanyong Bao; Jing Ma; Cewen Nan; Wenhui Duan; Laurent Bellaiche; Yimei Zhu; Jing Zhu
Journal:  Sci Adv       Date:  2018-05-18       Impact factor: 14.136

2.  The ultrathin limit of improper ferroelectricity.

Authors:  J Nordlander; M Campanini; M D Rossell; R Erni; Q N Meier; A Cano; N A Spaldin; M Fiebig; M Trassin
Journal:  Nat Commun       Date:  2019-12-06       Impact factor: 14.919

3.  Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor.

Authors:  K A Hunnestad; C Hatzoglou; Z M Khalid; P E Vullum; Z Yan; E Bourret; A T J van Helvoort; S M Selbach; D Meier
Journal:  Nat Commun       Date:  2022-08-15       Impact factor: 17.694

  3 in total

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