| Literature DB >> 28842706 |
Jacob L Poole1, Yang Yu2,3, Paul R Ohodnicki2.
Abstract
Electromagnetic fields produced by thermal fluctuation can excite the near-field optical states, creating the potential for thermal radiation orders of magnitude greater than what is predicted by Plank's blackbody theory. The typical schemes employed to probe the trapped electromagnetic energy of the near-field are with considerable technical challenges, suffering from scalability and high costs, hindering widespread use. A waveguide-based scheme relying on photon tunneling is presented as an alternate approach, as waveguides inherently provide a large density of channels for photons to tunnel to with the required k-vector matching and probability density overlap. The conducted experiments with a 10 nm indium tin oxide film, having plasmonic resonance in the 1500 nm wavelength range, show that the near-field EM radiation can be extracted to the far-field by establishing the mode of de-excitation to be that of photon tunneling to a nearby waveguide. Furthermore, it is also demonstrated that the thermally emitted energy is very sensitive to changes in the surface free electron density, a property that is unique to the near-field. In addition to the ease of implementation and scalability, the proposed waveguide-based extraction method does not require a vacuum-gap, which is a significant reduction in the required complexity.Entities:
Year: 2017 PMID: 28842706 PMCID: PMC5573359 DOI: 10.1038/s41598-017-10142-2
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1An illustration of the thermal energy stimulated surface plasmon resonance of an indium tin oxide thin-film and the subsequent de-excitation by tunneling to the optical fiber waveguide. The outer surface plasmon couples with the plasmons on the inner side of the film through near-field heat transfer (tunneling, dipole-dipole interactions, etc.).
Figure 2(A) Simplified illustration of combining an ITO thin-film with a waveguide without a vacuum-gap. (B) Simulation of the transverse magnetic reflectance for a film thickness of 10 nm, and for various carrier concentrations (n in units of 1020 cm−3) with associated mobility values (µ in units of cm2V−1s−1). (C) The real and imaginary parts of the refractive index associated with the carrier concentrations and mobility values. The location of the surface plamon resonance is identified by the intersection of the real and imaginary parts. (D) Simulation demonstrating the effect of film-thickness on the magnitude and location of the transverse magnetic reflectance.
Figure 3(A) Change in the relative spectral energy density Δuλ = (uλ − uλo)/uλo upon heating from 300 K to 873 K in N2, referenced to 373 K. (B) Measured emissive and absorptive near-field optical density of states at plasmon resonance for the 10 nm ITO thin-film at 873 K in various concentrations of H2 balanced with N2, normalized to 0 ppm of H2. The dashed lines correspond to thermal near-field emission based measurements, whereas the solid lines represent measurements conducted with an external light source. (C) Cross sectional EDS spot analysis which along with (D), the cross sectional TEM image, and (E), the BSE SEM image of the surface of a representative ITO film confirm the identity of the film, the thickness of the film to be ~10 nm, and the quality of the film.