Literature DB >> 28828578

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

Bogdan I Tsykaniuk1, Andrii S Nikolenko2, Viktor V Strelchuk2, Viktor M Naseka2, Yuriy I Mazur3, Morgan E Ware3, Eric A DeCuir3, Bogdan Sadovyi4, Jan L Weyher4, Rafal Jakiela5, Gregory J Salamo3, Alexander E Belyaev2.   

Abstract

Entities:  

Year:  2017        PMID: 28828578      PMCID: PMC5565748          DOI: 10.1186/s11671-017-2227-1

Source DB:  PubMed          Journal:  Nanoscale Res Lett        ISSN: 1556-276X            Impact factor:   4.703


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Erratum

In the original publication [1] was equation 2 not correctly displayed in the online PDF. Furthermore reference 1 and 2 were incorrect. The correct versions can found below: Incorrect equation in the online PDF: Correct equation in the online article: Incorrect reference 1 1. Manasreh MO, Weaver BD (2001) Local vibrational modes of carbonhydrogen complexes in proton irradiated AlGaN. Mater Res 692:403–409 Should be exchanged with this one: Davis RF (1991) III-V Nitrides for Electronic and Optoelectronic Applications. Proc IEEE 79: 702-712 Incorrect reference 2 2. Sun WH, Chen KM, Yang ZJ, Li J, Tong YZ, Jin SX, Zhang GY, Zhang QL, Qin GG (1999) Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN. J Appl Phys 85:6430–6433 Should be exchanged with this one: Xing H, Keller S, Wu Y-F, et al (2001) Gallium nitride based transistors. J Phys Condens Matter 7139: 7139-7157 The equation in the online article has been updated to rectify this error.
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1.  Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

Authors:  Bogdan I Tsykaniuk; Andrii S Nikolenko; Viktor V Strelchuk; Viktor M Naseka; Yuriy I Mazur; Morgan E Ware; Eric A DeCuir; Bogdan Sadovyi; Jan L Weyher; Rafal Jakiela; Gregory J Salamo; Alexander E Belyaev
Journal:  Nanoscale Res Lett       Date:  2017-06-08       Impact factor: 4.703

  1 in total

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