| Literature DB >> 28821795 |
Abstract
Recent experimental progress in Hall measurements in bilayer graphene in the so-called open-face configuration of boron nitride encapsulated samples, together with the earlier technique of suspended samples, allows for precise observation of the fractional quantum Hall effect (FQHE) in all 4 subbands of the Lowest Landau level (with n = 0 and n = 1) and in the next LL subbands (with n = 2) in the bilayer system. Many newly observed FQHE features do not agree with a conventional model of composite fermions and reveal a different hierarchy in comparison to monolayer graphene or GaAs 2DEG. We explain the peculiarity of the FQHE hierarchy in the bilayer system in the framework of a topological approach, which includes the composite fermion model as its special case. Inclusion of a topological effect caused by the hopping of electrons between the two sheets in the bilayer system allowed for an explanation of the FQHE hierarchy in the graphene bilayer in satisfactory accordance with the experimental observations.Entities:
Year: 2017 PMID: 28821795 PMCID: PMC5562899 DOI: 10.1038/s41598-017-09166-5
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Fitting to experimental data of cyclotron braid hierarchy for FQHE in monolayer graphene in the first three subbands in the first LL (n = 1), . Upper panel—R after experiment[10], lower panel—the theoretical hierarchy. The larger residual longitudinal resistance (in the upper panel for and for other fractions with denominators 5, 7, 9) corresponds to correlated states of next-nearest electrons, of every second (x = 2) or every third (x = 3) particle, according to the commensurability series with (lower panel) (x = 1 corresponds to CF-like commensurability)—uncorrelated electrons enhance resistance.
Figure 2In the bilayer system, there are two possible topologically non-equivalent types of three-loop cyclotron trajectories (corresponding to particle exchange along the braid generator with one additional loop, , built from half of the 3-loop cyclotron orbits[22]). In the left panel, the three-loop orbit is distributed between two sheets—both sheets contribute their own magnetic fluxes, in contrast to the case when the three-loop orbit is located in a single sheet (right panel). This leads to the different commensurabilities in the following two situations. If loops are distributed between both layers, only two loops participate in the increasing of the orbit size, which gives the commensurability condition . In the case when all three loops are placed in a single layer, the commensurability repeats that from the monolayer case and .
Figure 3If a 2-loop orbit is distributed among two sheets (right), then the sizes of both loops are the same as that of a single loop (in the figure, A = S/N, as for v = 1 at B 0), but if both loops are placed in a single sheet, the double planar orbit is twice as large (left). This results in different commensurabilities in those two situations at the same magnetic field.
Figure 4When electrons can hop between two sheets, as in bilayer graphene, the topology of the single-loop interchange of particles may change: both particles can hop between sheets and may be in opposite layers when they traverse their own orbits (centre). In this case, particles may not conserve their mutual distance. This results in leakage of flux of the cyclotron orbit and a smaller-than-nominal orbit (left) that can match particles that lie closer together (right).
Figure 5Longitudinal resistivity R measured in bilayer graphene (encapsulated in hBN with open face) for n = 2 subbands (first LL)—experiment[5]. The series of fractions with denominator 3 is consistent with the single-loop braid commensurability at the leakage of flux to the opposite sheet in the bilayer structure; the same holds for fractions with denominator 2 or 4. Fractions with denominator 5 correspond to single-loop braid commensurability for n = 2 (experiment[5] is repeated with different samples). [adapted from ref.[5] under CC-BY 4.0, coloured fractions are added].
Figure 6Resistivity R for the bilayer graphene experiment[5] for the first two subbands with n = 2 from the first LL () (a third sample). The pronounced FQHE features for fractions with denominator 3 for single-loop commensurability (due to leakage of flux between the two sheets of the bilayer structure) and for fractions with denominator 5, also for single-loop braid commensurability, are marked. [adapted from ref.[5] under CC-BY 4.0, coloured fractions are added].
Comparison of subband arrangements in bilayer graphene, monolayer graphene and GaAs 2DEG, and the corresponding filling rate range (the nominal size of the cyclotron orbit corresponding to n is ; however, in the bilayer system, the orbit size can be reduced by flux leakage to the opposite sheet).
| Type of system | Subbands of the LLL | Subbands of the first LL | Subbands of the second LL |
|---|---|---|---|
| bilayer graphene | ( | ( | ( |
| ( | ( | ( | |
| ( | ( | ( | |
| ( | ( | ( | |
| monolayer graphene | ( | ( | ( |
| ( | ( | ( | |
| ( | ( | ||
| ( | ( | ||
| GaAs 2DEG | ( | ( | ( |
| ( | ( | ( |
Comparison of filling hierarchies in the LLL level in bilayer graphene for two mutually inverted successions of the two lowest subbands: , (upper – first two rows) and , (lower – last two rows). FQHE at exists for the upper sequence of subbands and it disappears for the lower subband sequence.
| LL subb. | FQHE(single-loop), paired–not FQHE, IQHE | FQHE(multi-loop) ( | Hall metal |
|---|---|---|---|
| (1) | 1 |
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| (2) |
|
|
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| (1) |
|
|
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| (2) | 1, 2 |
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Figure 8Observation of FQHE at T = 0.25 K in bilayer suspended graphene, magneto-resistance R (blue curve) and R (black curve) at the lateral voltage −27 V, after experiment[4]. Shown in red is the fitting with the cyclotron braid group hierarchy (as in the upper part of Table 2) for mirror valence-band FQHE states, including (the mirror fraction to ). [adapted with permission from ref.[4], Copyright 2014 American Chemical Society, coloured fractions are added].
Figure 7For comparison—measurements of resistivity R in conventional 2DEG for a wide range of magnetic fields corresponding to n = 1, 2 in the high-mobility GaAs/AlGaAs heterostructure (following ref.[25]). In red colour, fractions are indicated for the FQHE (single-loop)—doublets with denominator 3 in subbands with n = 1 and quartets with denominator 5 for n = 2, in accordance with braid commensurability predictions. The pair with denominator 3 for n = 0 (blue, 5/3, 4/3) corresponds to 3-loop orbits. At 11/2, 9/2, 7/2, and 5/2, the braid group approach predicts paired states, but for 3/2 and 1/2, it predicts Hall metal. A similar structure of FQHE is predicted for monolayer graphene, though the data for n = 2 in monolayer graphene are not available yet.
Figure 9Fan diagram for R (V. B) in monolayer graphene up to 11 T from experiment[10]. The noticeable property is the closeness in value of R of the FQHE features for fractions with denominator 3 for n = 1 with those for IQHE, which supports the FQHE single-loop braid correlations in corresponding states, similar to the case of IQHE.