Photoelectric response properties under UV/red light irradiation of ZnO nanorod arrays coated with vertically aligned MoS2 nanosheets.

MoS2 with layered structure and distinct physical properties has attracted attention for electronic or optoelectronic devices. The photoelectric response properties of MoS2/ZnO heterojunctions based devices fabricated by spin-coating MoS2 nanosheets solutions on ZnO nanorod arrays (NRs) were investigated. The results revealed that MoS2 nanosheets were vertically aligned on the surface of ZnO NRs and the devices exhibit good photoresponse stability and reproducibility under UV and red light illuminations. The vertically aligned MoS2 nanosheets facilitate the fast photogenerated carrier separation and transport. The devices with few-layered MoS2 nanosheets show a high responsivity and detectivity under UV and red light illuminations, which can be attributed to small contact resistance between MoS2 nanosheets and ZnO NRs. These results provide important insights in the facile fabrication strategy and understanding electronic and optoelectronic devices based on the heterostructures with vertically aligned MoS2.