Silicon and water-deficit stress differentially modulate physiology and ultrastructure in wheat (Triticum aestivum L.).

Plants combat drought stress by coordinating various metabolic enzymes, and endogenous phytohormones, such as indole acetic acid (IAA) and abscisic acid (ABA). In the present study, 37-day-old wheat seedlings were subjected to the Hoagland solution with 20% PEG for 7 days (to create the artificial osmotic stress environment) in the greenhouse, and were supplemented with an optimized concentration (1.0 mM) of silicon (Si) to alleviate the negative effects of former stress on physiological, biochemical and phytohormones contents. Exogenous Si significantly improved plant growth parameters under osmotic stress compared to PEG treatment alone (the increase was up to 6 and 9% for shoot and root fresh weight, 4 and 12% for shoot and root dry weight, respectively). Moreover, Si significantly decreased the H2O2, MDA contents, electrolyte leakage, antioxidant enzyme activity (POD), and mineral contents (K and Ca) under osmotic stress but markedly increased the ascorbic acid(AsA), soluble sugar and mineral (Mg and Si) contents. Interestingly, Si application under water-deficit stress differently modulated the endogenous levels of ABA, IAA and JA in wheat plants compared to PEG treatment alone. This study suggests that exogenous Si improves the plant growth by modulating the nutrient (Na, Mg and Si) uptake and phytohormone levels in wheat under water-deficit stress.