| Literature DB >> 28793678 |
Hanaa M Ahmed1,2, Amber D Windham3, Maryam M Al-Ejji4, Noora H Al-Qahtani5, Mohammad K Hassan6, Kenneth A Mauritz7, Randy K Buchanan8, J Paige Buchanan9.
Abstract
Fullerene-containing materials have the ability to store and release electrical energy. Therefore, fullerenes may ultimately find use in high-voltage equipment devices or as super capacitors for high electric energy storage due to this ease of manipulating their excellent dielectric properties and their high volume resistivity. A series of structured fullerene (C60) polymer nanocomposites were assembled using the thiol-ene click reaction, between alkyl thiols and allyl functionalized C60 derivatives. The resulting high-density C60-urethane-thiol-ene (C60-Thiol-Ene) networks possessed excellent mechanical properties. These novel networks were characterized using standard techniques, including infrared spectroscopy (FTIR), differential scanning calorimetry (DSC), dynamic mechanical analysis (DMA), and thermal gravimetric analysis (TGA). The dielectric spectra for the prepared samples were determined over a broad frequency range at room temperature using a broadband dielectric spectrometer and a semiconductor characterization system. The changes in thermo-mechanical and electrical properties of these novel fullerene-thiol-ene composite films were measured as a function of the C60 content, and samples characterized by high dielectric permittivity and low dielectric loss were produced. In this process, variations in chemical composition of the networks were correlated to performance characteristics.Entities:
Keywords: dielectric properties; fullerenol; nanocomposites; thiol-ene
Year: 2015 PMID: 28793678 PMCID: PMC5458907 DOI: 10.3390/ma8115424
Source DB: PubMed Journal: Materials (Basel) ISSN: 1996-1944 Impact factor: 3.623
Scheme 1Preparation of C60-Thiol-Ene Network.
Compositions of prepared C60-containing thiol-ene films.
| Sample ID | NCO Equiv. | OH Equiv. | SH Equiv. | Wt % C60 * |
|---|---|---|---|---|
| 9-C60-TE | 2 | 1 | 2 | 9 |
| 15-C60-TE | 1 | 1 | 1 | 15 |
| 27-C60-TE | 1 | 2 | 1 | 27 |
* wt % C60 was calculated from the mass of C60(OH)29 in each sample in relation to the total mass of all nonvolatile film constituents, expressed as a percent.
Characterization of C60-TE films.
| ID | Gel % | Tg (°C) by DSC | Tg (°C) by DMA | DMA Tan δ Width at ½ Height (°C) | Tan δ Peak Height |
|---|---|---|---|---|---|
| 9-C60-TE | 88 | −0.7 | 26.3 | 31 | 0.84 |
| 15-C60-TE | 94 | −1.1 | 17.7 | 26 | 0.70 |
| 27-C60-TE | 100 | −12.9 | 4.7 | 19 | 0.76 |
Figure 1DSC analysis of the C60-thiol-ene network film series, C60 wt % in composite film noted.
Figure 2(a) Dynamic storage modulus (Eʹ); and (b) loss tangent (tan δ) for the C60-thiol-ene network film series, C60 wt % in composite film noted.
Figure 3Dielectric permittivity storage (a); and loss (b) of films having different composition at 22 °C; C60 % noted in legend.
Figure 4Dielectric permittivity storage (a); and loss (b) of films having different composition at room temperature, as measured by the semiconductor characterization system (SCS); C60% noted on plots.