| Literature DB >> 28793569 |
Olga Kuschel1,2, Florian Dieck3,4, Henrik Wilkens5,6, Sebastian Gevers7,8, Jari Rodewald9,10, Christian Otte11,12, Marvin Hartwig Zoellner13, Gang Niu14, Thomas Schroeder15, Joachim Wollschläger16,17.
Abstract
Praseodymia films have been exposed to oxygen plasma at room temperature after deposition on Si(111) via molecular beam epitaxy. Different parameters as film thickness, exposure time and flux during plasma treatment have been varied to study their influence on the oxygen plasma oxidation process. The surface near regions have been investigated by means of X-ray photoelectron spectroscopy showing that the plasma treatment transforms the stoichiometry of the films from Pr2O3 to PrO2. Closer inspection of the bulk properties of the films by means of synchrotron radiation based X-ray reflectometry and diffraction confirms this transformation if the films are thicker than some critical thickness of 6 nm. The layer distance of these films is extremely small verifying the completeness of the plasma oxidation process. Thinner films, however, cannot be transformed completely. For all films, less oxidized very thin interlayers are detected by these experimental techniques.Entities:
Keywords: X-ray photoelectron spectroscopy; low energy electron diffraction; molecular beam epitaxy; phase separation; plasma enhanced oxidation; praseodymia; strain; synchrotron radiation X-ray diffraction; synchrotron radiation X-ray reflectometry; ultrathin film
Year: 2015 PMID: 28793569 PMCID: PMC5512919 DOI: 10.3390/ma8095312
Source DB: PubMed Journal: Materials (Basel) ISSN: 1996-1944 Impact factor: 3.623
Figure 1Pr 3d (a) and Pr 4d (b) photoemission spectra from praseodymia films before (blue lines) and after plasma treatment (red lines). (a) Bonding and anti-bonding states of Pr (PrO stoichiometry) are denoted by u and v, respectively, while these states are denoted by x and y for Pr (PrO stoichiometry). In addition, z denotes the pure main emission here; (b) Pr 4d photoelectrons due to higher binding energies are observed after the transformation from PrO to PrO.
Figure 2SR-XRR (a) and SR-XRD ((00L) crystal truncation rod) (b) data obtained from praseodymia films of different thickness: 6 nm (green line), 9 nm (blue line) and 18 nm (red line). The lower curves are obtained from the PDA treated samples while the upper curves are obtained after additional oxygen plasma treatment (26 Pa O, 40 sccm flux, 15 min). The reference films without plasma treatment show higher oxidation states due to oxidation under ambient conditions. After plasma treatment the 9 nm and 18 nm films are complete oxidized while the 6 nm film is only partly oxidized.
Figure 3SR-XRR (a) and SR-XRD (b) data obtained from 9 nm praseodymia films after different plasma treatment times (5–15 min) keeping other parameters (26 Pa O, 40 sccm flux) constant. Complete oxidation is already obtained after the first 5 min oxidation step.
Figure 4SR-XRR (a) and SR-XRD (b) data obtained from 9 nm praseodymia films using different O fluxes during plasma treatment (20–80 sccm) keeping other parameters (26 Pa O, 15 min treatment time) constant. The lowest flux of 20 sccm O is alreday sufficient to completely oxidize the praseodymia film.
Figure 5Schematic drawing of the plasma oxidation process. Randomly distributed oxygen vacancies in the PrO film are occupied by oxygen from the oxygen plasma. The drawing considers also the B orientation of the praseodymia films with respect to the Si(111) support.