| Literature DB >> 28788870 |
L D Huang, J Y Wu, J P Wang, C M Tsai, Y H Huang, D R Wu, S D Lin.
Abstract
We have designed and fabricated high-performance single-photon avalanche diodes (SPADs) by using 0.18-µm high-voltage CMOS technology. Without any technology customization, the SPADs have low dark-count rate, high photon-detection probability, low afterpulsing probability, and acceptable timing jitter and breakdown voltage. Our design provides a low-cost and high-performance SPAD for various applications.Entities:
Year: 2017 PMID： 28788870 DOI： 10.1364/OE.25.013333
Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894