| Literature DB >> 28788656 |
Ian D R Mackinnon1, Abigail Winnett2, Jose A Alarco3,4, Peter C Talbot5,6.
Abstract
High quality, micron-sized interpenetrating grains of MgB₂, with high density, are produced at low temperatures (~420 °C < T < ~500 °C) under autogenous pressure by pre-mixing Mg powder and NaBH₄ and heating in an Inconel 601 alloy reactor for 5-15 h. Optimum production of MgB₂, with yields greater than 75%, occurs for autogenous pressure in the range 1.0 MPa to 2.0 MPa, with the reactor at ~500 °C. Autogenous pressure is induced by the decomposition of NaBH₄ in the presence of Mg and/or other Mg-based compounds. The morphology, transition temperature and magnetic properties of MgB₂ are dependent on the heating regime. Significant improvement in physical properties accrues when the reactor temperature is held at 250 °C for >20 min prior to a hold at 500 °C.Entities:
Keywords: magnesium diboride synthesis; sodium borohydride; superconductivity
Year: 2014 PMID: 28788656 PMCID: PMC5453221 DOI: 10.3390/ma7053901
Source DB: PubMed Journal: Materials (Basel) ISSN: 1996-1944 Impact factor: 3.623
Parameters for formation of MgB2.
| Run | Hold Temperature; Time (°C; h) | Elapsed Time | Major Products | |||
|---|---|---|---|---|---|---|
| 1 | 420 | 50, 0.3; 250, 0.3 | 16 | 1.3 | 0.1 | MgB2 (Mg, MgO) |
| 2 | 500 | 50, 0.3; 250, 0.3 | 16 | 1.7–2.0 | −0.1 | MgB2 (MgO) NaH NaMgH3 (NaBH4) |
| 3 | 500 | 50, 0.3; 250, 5.0 | 22 | 1.66 | −0.09 | MgB2 (NaH, MgO) |
| 4 | 500 | no hold | 11 | 0.29 | −0.07 | MgB2 (MgO) NaH (NaBH4) |
time until reactor cooled to ~30 °C
compounds in parentheses are in minor abundance
products are washed before XRD analysis, so Na products are not observed.
Figure 1.Temperature and pressure profiles for Runs 1 and 2.
Parameters for low temperature reactions.
| Run | Hold Temperature; Time (°C; h) | Elapsed Time | Major Products | |||
|---|---|---|---|---|---|---|
| 5 | 400 | 50, 0.3; 250, 0.3 | 10 | 0.36 | −0.04 | Mg (MgB2) NaBH4 (NaH) |
| 6 | 400 | no hold | 10 | 0.61 | −0.02 | Mg (MgB2) NaBH4 (NaH) |
| 7 | 300 | 50, 0.3; 250, 0.3 | 5 | 0.071 | −0.02 | Mg MgH2 (MgO) NaBH4 |
| 8 | 200 | 50, 0.3 | 9 | 0.051 | −0.03 | Mg, NaBH4 |
| 9 | 200 | 50, 0.3 | 10 | 0.0 | −0.02 | Mg, NaBH4 |
time until reactor cooled to ~30 °C
compounds in parentheses are in minor abundance.
Figure 2.XRD patterns for Runs 1, 3 and 4; indices are for MgB2.
Figure 3.Temperature and pressure profiles for Runs 3 and 4.
Figure 4.SEM images of MgB2 from (a) Run 2 shows pseudomorph aggregates of Mg grains. Higher resolution SEM image (inset) shows euhedral angular features of grains and (b) Run 3 shows greater extent of inter-penetrating grains and optical micrograph (inset) with multiple orientations of MgB2 surfaces.
Figure 5.SEM images of MgB2 formed during Run 3 at 500 °C (see Table 1). Note the presence of vesicles on some surfaces suggesting vapor phase reaction.
Figure 6.SEM images from (a) Run 4 at 500 °C showing MgB2 as lower density, irregular grains compared with Run 3; (b) NaH obtained from the top of the reactor after Run 4; (c) and (d) Filamentous material from Run 7 showing MgH2.
Figure 7.AC magnetic susceptibility for MgB2 formed from Runs 3 and 4 showing variation with applied magnetic field. At zero field Tc = 38.5 K for Run 3 and Tc = 38.0 K for Run 4. Vertical axes are the same scale. Note difference in AC susceptibility for Run 4 compared with Run 3.
Figure 8.Critical current density (Jc) for MgB2 sample from Run 3 as a function of external field over the temperature range 5 K to 30 K.