| Literature DB >> 28786594 |
Daryl I Vulis, Yang Li, Orad Reshef, Philip Camayd-Muñoz, Mei Yin, Shota Kita, Marko Lončar, Eric Mazur.
Abstract
Zero-index materials exhibit exotic optical properties that can be utilized for integrated-optics applications. However, practical implementation requires compatibility with complementary metallic-oxide-semiconductor (CMOS) technologies. We demonstrate a CMOS-compatible zero-index metamaterial consisting of a square array of air holes in a 220-nm-thick silicon-on-insulator (SOI) wafer. This design supports zero-index modes with Dirac-cone dispersion. The metamaterial is entirely composed of silicon and offers compatibility through low-aspect-ratio structures that can be simply fabricated in a standard device layer. This platform enables mass adoption and exploration of zero-index-based photonic devices at low cost and high fidelity.Entities:
Year: 2017 PMID: 28786594 DOI: 10.1364/OE.25.012381
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894