| Literature DB >> 28773163 |
Ajay Kumar Yagati1, Taek Lee2,3, Jeong-Woo Choi4.
Abstract
In the present study, we propose a method for bio-nano hybrid formation by coupling a redox metalloprotein, Azurin, with CdSe-ZnS quantum dot for the development of a nanoscale resistive memory device. The covalent interaction between the two nanomaterials enables a strong and effective binding to form an azurin/CdSe-ZnS hybrid, and also enabled better controllability to couple with electrodes to examine the memory function properties. Morphological and optical properties were performed to confirm both hybrid formations and also their individual components. Current-Voltage (I-V) measurements on the hybrid nanostructures exhibited bistable current levels towards the memory function device, that and those characteristics were unnoticeable on individual nanomaterials. The hybrids showed good retention characteristics with high stability and durability, which is a promising feature for future nanoscale memory devices.Entities:
Keywords: CdSe-ZnS; azurin; bio-nano hybrid structure; resistive bistable switching; scanning tunneling spectroscopy
Year: 2017 PMID: 28773163 PMCID: PMC5551846 DOI: 10.3390/ma10070803
Source DB: PubMed Journal: Materials (Basel) ISSN: 1996-1944 Impact factor: 3.623
Figure 1(Step 1) Immobilization scheme of CdSe-ZnS on an Au electrode via the ligand 1,4 Dithiane; and (Step 2) Immobilization strategy for azurin with CdSe-ZnS on an Au electrode where azurin was adsorbed onto a 1-octadecanethiol self-assembled monolayer, thereby forming a single bio-nano hybrid nanostructure.
Figure 2Sets of experimental SPR curves averaged over several locations on an electrode corresponding to (i) bare Au; (ii) CdSe-ZnS on Au; and (iii) Azurin/CdSe-ZnS/Au. Inset shows the zoomed portion of the reflective angle from 42.4° to 44.4°.
Figure 3The morphology images obtained from scanning tunneling microscopy for (a) bare Au; (b) CdSe-ZnS on Au; and (c) azurin/CdSe-ZnS/Au. Images were obtained at a scan rate of 1 Hz. The section analysis shows the corresponding height and width of the particles of each obtained image. (d) HR-TEM image of CdSe-ZnS nanoparticles inset shows the lattice structure of a single CdSe-ZnS particle.
Figure 4I–V characteristics obtained from scanning tunneling spectroscopy (STS) for (a) bare Au; (b) CdSe-ZnS on Au; (c) azurin on Au; and (d) azurin/CdSe-ZnS on an Au electrode respectively.
Figure 5(a) I–V characteristics of the azurin/CdSe-ZnS hybrid on Au, shows low (OFF state) to high (ON state) for memory device applications; (b) dI/dV vs V spectra on the azurin/CdSe-ZnS on the Au electrode; (c) Plot of ln(I)–V1/2 fit for the low conducting state, and; (d) ln(I/V2)–1/V fit for the high conducting state.