| Literature DB >> 28772931 |
Daniel Bellet1, Mélanie Lagrange2, Thomas Sannicolo3,4, Sara Aghazadehchors5,6, Viet Huong Nguyen7,8, Daniel P Langley9, David Muñoz-Rojas10, Carmen Jiménez11, Yves Bréchet12, Ngoc Duy Nguyen13.
Abstract
The past few years have seen a considerable amount of research devoted to nanostructured transparent conducting materials (TCM), which play a pivotal role in many modern devices such as solar cells, flexible light-emitting devices, touch screens, electromagnetic devices, and flexible transparent thin film heaters. Currently, the most commonly used TCM for such applications (ITO: Indium Tin oxide) suffers from two major drawbacks: brittleness and indium scarcity. Among emerging transparent electrodes, silver nanowire (AgNW) networks appear to be a promising substitute to ITO since such electrically percolating networks exhibit excellent properties with sheet resistance lower than 10 Ω/sq and optical transparency of 90%, fulfilling the requirements of most applications. In addition, AgNW networks also exhibit very good mechanical flexibility. The fabrication of these electrodes involves low-temperature processing steps and scalable methods, thus making them appropriate for future use as low-cost transparent electrodes in flexible electronic devices. This contribution aims to briefly present the main properties of AgNW based transparent electrodes as well as some considerations relating to their efficient integration in devices. The influence of network density, nanowire sizes, and post treatments on the properties of AgNW networks will also be evaluated. In addition to a general overview of AgNW networks, we focus on two important aspects: (i) network instabilities as well as an efficient Atomic Layer Deposition (ALD) coating which clearly enhances AgNW network stability and (ii) modelling to better understand the physical properties of these networks.Entities:
Keywords: (Spatial) ALD.; flexible; metallic nanowire; network; percolation; silver nanowire; stability; transparent electrode
Year: 2017 PMID: 28772931 PMCID: PMC5552077 DOI: 10.3390/ma10060570
Source DB: PubMed Journal: Materials (Basel) ISSN: 1996-1944 Impact factor: 3.623
Figure 1The main length scales at play in metallic nanowire (MNW) networks. From left to right: Transmission Electron Microscopy observations of the extremity of a single MNW and of a junction between two adjacent MNWs; Scanning Electron Microscopy observation of a dense MNW network; picture of a macroscale flexible transparent electrode composed of MNWs.
A few characteristics associated to five common methods used to fabricate MNW networks. This corresponds to general indications since the main tendencies depend on experimental conditions and application requirements. Plus signs indicate better values.
| Method | Homogeneity | Scalable | Cost | Examples in the Literature |
|---|---|---|---|---|
| Spin coating | + | + | +++ | Langley [ |
| Spray coating | +++ | +++ | ++ | Coskun [ |
| Vacuum filtration | +++ | + | + | De [ |
| Drop casting | + | + | + | Gobelt [ |
| Meyer rod | ++ | +++ | ++ | Deng [ |
Figure 2Evolution of the electrical resistance (R) of networks deposited by spin-coating and composed of AgNW with different average diameters (D) during a 2 °C·min−1 thermal ramp in air. One can clearly observe that the smaller the diameter, the lower the characteristic temperature, in agreement with Equation (2).
Figure 3(a) Optical total transmittance (substrate contribution non-subtracted) of a bare substrate (in blue) and three types of transparent conductive materials in the UV-VIS-NIR region: Indium-doped Tin Oxide (ITO, green), Fluor-doped Tin Oxide (FTO, red), and AgNW network deposited by spray coating (black) are depicted. The associated sheet resistance is reported and is 15, 16, and 11 ohms per square for ITO [49], AgNW network [16], and FTO [50], respectively. (b) Comparison showing the relative increase of the electrical resistance between opposite sides of different transparent conductive materials TCMs when subjected to mechanical bending. The associated bending radius of curvature is equal to 5 mm while the TCM is on the opposite side to the bending radius and therefore placed under tension (data extracted from Sannicolo et al. [14]).
Figure 4(a) In-situ measured resistance versus temperature of a AgNW network (deposited by spray-coating) during a thermal ramp showing that when a 12 nm thick layer of Al2O3 is deposited by SALD on AgNWs, a clear stability enhancement is observed since the network can undergo a thermal ramp up to 315 °C for bare AgNW and at least up to 370 °C for coated AgNW. For the coated network, the metallic behaviour can be observed through the linear increase of the electrical resistance with temperature associated to electron-phonon interactions. The SEM pictures are associated to bare AgNW (b) and coated AgNW (c) with 12 nm of Al2O3. The SEM picture (d) corresponds to a higher resolution of a AgNW network coated with 43 nm of Al2O3, where the coating can be clearly seen. Scale bars are 10 µm for (b) and (c) and 500 nm for (d). AgNWs have an average diameter of 90 nm and lengths between 10 to 20 µm, and the associated amd value of the network is about 85 mg/m2.
Figure 5Properties of networks with AgNW of average diameter 117 nm and average length 42.5 µm deposited by spin-coating. (a) Dependence of physical properties versus reduced areal mass density (amd/amd) of AgNW networks: minimum electrical resistance measured during thermal ramp (as that shown in Figure 2) (R), optical transparency (Topt), and haze factor (HF), the later two measured at a wavelength of 550 nm. The circles are experimental data while the fits correspond to the use of Equations (5) and (6) for the resistance and transparency, respectively; (b) Optical transmittance and haze factor (HF) versus sheet resistance of the networks made of AgNW117 networks with various network densities. The fits correspond to the use of Equations (7) and (10), for the transparency and haze factor dependence on sheet resistance, respectively.