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Literature DB >> 28752671

Graphene-Contacted Ultrashort Channel Monolayer MoS₂ Transistors.

Li Xie^1,2, Mengzhou Liao^1,2, Shuopei Wang^1,2, Hua Yu^1,2, Luojun Du¹, Jian Tang^1,2, Jing Zhao³, Jing Zhang⁴, Peng Chen^1,2, Xiaobo Lu^1,2, Guole Wang^1,2, Guibai Xie⁵, Rong Yang^1,2,6, Dongxia Shi^1,2,6, Guangyu Zhang^1,2,6,7.

Abstract

2D semiconductors are promising channel materials for field-effect transistors (FETs) with potentially strong immunity to short-channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS2 . FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene-contacted ultrashort channel MoS2 FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material-based devices for ultrascaled electronics.

Entities: Chemical

Keywords: MoS2; graphene contacts; short-channel effects; ultrashort channels

Year: 2017 PMID： 28752671 DOI： 10.1002/adma.201702522

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

Keyword Cloud
Cited

8 in total

Review 1. Two-Dimensional Pnictogen for Field-Effect Transistors.

Authors: Wenhan Zhou; Jiayi Chen; Pengxiang Bai; Shiying Guo; Shengli Zhang; Xiufeng Song; Li Tao; Haibo Zeng
Journal: Research (Wash D C) Date: 2019-10-16

2. Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors.

Authors: Hong Li; Jiakun Liang; Peipei Xu; Jing Luo; Fengbin Liu
Journal: RSC Adv Date: 2020-06-02 Impact factor: 4.036

3. Layer-by-layer epitaxy of multi-layer MoS₂ wafers.

Authors: Qinqin Wang; Jian Tang; Xiaomei Li; Jinpeng Tian; Jing Liang; Na Li; Depeng Ji; Lede Xian; Yutuo Guo; Lu Li; Qinghua Zhang; Yanbang Chu; Zheng Wei; Yanchong Zhao; Luojun Du; Hua Yu; Xuedong Bai; Lin Gu; Kaihui Liu; Wei Yang; Rong Yang; Dongxia Shi; Guangyu Zhang
Journal: Natl Sci Rev Date: 2022-04-21 Impact factor: 23.178

Graphene-Contacted Ultrashort Channel Monolayer MoS₂ Transistors.

Review 1. Two-Dimensional Pnictogen for Field-Effect Transistors.

2. Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors.

3. Layer-by-layer epitaxy of multi-layer MoS₂ wafers.

Review 4. A wafer-scale synthesis of monolayer MoS₂ and their field-effect transistors toward practical applications.

Review 5. Two dimensional semiconducting materials for ultimately scaled transistors.

6. Twist angle-dependent conductivities across MoS₂/graphene heterojunctions.

7. Unusual properties and potential applications of strain BN-MS₂ (M = Mo, W) heterostructures.

8. Ultrashort Vertical-Channel van der Waals Semiconductor Transistors.

Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors.

Review 1. Two-Dimensional Pnictogen for Field-Effect Transistors.

2. Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors.

3. Layer-by-layer epitaxy of multi-layer MoS2 wafers.

Review 4. A wafer-scale synthesis of monolayer MoS2 and their field-effect transistors toward practical applications.

Review 5. Two dimensional semiconducting materials for ultimately scaled transistors.

6. Twist angle-dependent conductivities across MoS2/graphene heterojunctions.

7. Unusual properties and potential applications of strain BN-MS2 (M = Mo, W) heterostructures.

8. Ultrashort Vertical-Channel van der Waals Semiconductor Transistors.

Graphene-Contacted Ultrashort Channel Monolayer MoS₂ Transistors.

3. Layer-by-layer epitaxy of multi-layer MoS₂ wafers.

Review 4. A wafer-scale synthesis of monolayer MoS₂ and their field-effect transistors toward practical applications.

6. Twist angle-dependent conductivities across MoS₂/graphene heterojunctions.

7. Unusual properties and potential applications of strain BN-MS₂ (M = Mo, W) heterostructures.