Literature DB >> 28738145

Giant Blistering of Nanometer-Thick Al2O3/ZnO Films Grown by Atomic Layer Deposition: Mechanism and Potential Applications.

Hongfei Liu1, Shifeng Guo1, Ren Bin Yang1, Coryl J J Lee1, Lei Zhang1.   

Abstract

Giant circular blisters of up to 300 μm diameter and 10 μm deflection have been produced on nanometer-thick Al2O3-on-ZnO stacks grown by atomic layer deposition at 150 °C followed by annealing at elevated temperatures. Their shape changes upon varied ambient pressures provide evidence that their formation is related to an anneal-induced outgassing combined with their impermeability. The former mainly occurs in the bottom ZnO layer that recrystallizes and releases residual hydroxide ions at elevated temperatures while the latter is dominantly contributed by the pinhole-free Al2O3 layer on top. Vibrations at a resonant frequency of ∼740 kHz are mechanically actuated and optically probed from an individual blister. By modulating the thickness and stacking sequence of Al2O3 and ZnO, we further demonstrate a localized circular film swelling upon electron-beam irradiation and its recovery after reducing the irradiation flux. The elastic blistering and the recoverable swelling of the nanometer-thick films represent a miniaturized event-driven mechanical system for potential functioning applications.

Entities:  

Keywords:  Al2O3/ZnO; atomic layer deposition; mechanical responses; postgrowth annealing; thin film blistering

Year:  2017        PMID: 28738145     DOI: 10.1021/acsami.7b08260

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  1 in total

1.  Influence of growth temperature on dielectric strength of Al2O3 thin films prepared via atomic layer deposition at low temperature.

Authors:  Suyeon Kim; Seung-Hun Lee; In Ho Jo; Jongsu Seo; Yeong-Eun Yoo; Jeong Hwan Kim
Journal:  Sci Rep       Date:  2022-03-24       Impact factor: 4.379

  1 in total

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