| Literature DB >> 28731326 |
Yeong Jae Shin1, Lingfei Wang1, Yoonkoo Kim, Ho-Hyun Nahm1, Daesu Lee1, Jeong Rae Kim1, Sang Mo Yang2, Jong-Gul Yoon3, Jin-Seok Chung4, Miyoung Kim, Seo Hyoung Chang5, Tae Won Noh1.
Abstract
With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found that a uniform SrO-TiO2 termination sequence at the SRO/BTO interface can be achieved by lowering the PO2 to 5 mTorr, regardless of the total background gas pressure (Ptotal), growth mode, or growth rate. Our results indicate that the thermodynamic stability of the BTO surface at the low-energy kinetics stage of PLD can play an important role in surface/interface termination formation. This work paves the way for realizing termination engineering in functional oxide heterostructures.Entities:
Keywords: ferroelectric; interface engineering; oxide heterostructure; pulsed laser deposition; thermodynamic surface stability
Year: 2017 PMID: 28731326 DOI: 10.1021/acsami.7b07813
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229