Literature DB >> 28719724

Synthesis and Properties of New N-Heteroheptacenes for Solution-Based Organic Field Effect Transistors.

Fei Zhou1, Sheng Liu1, Bernard D Santarsiero2, Donald J Wink1, Damien Boudinet3, Antonio Facchetti3, Tom Driver1,4.   

Abstract

A series of N-heteroheptacenes was synthesized from ortho-thiophene-substituted aryl azides using a Rh2II -catalyzed C-H bond amination reaction to construct the thienoindole moieties. This reaction tolerated the presence of electron-donating or withdrawing groups on the aryl azide without adversely affecting the yield of the amination reaction. The central thiophene ring was created from two thienoindole pieces through a Pd-catalyzed Stille reaction to install the thioether followed by a Cu-mediated Ullman reaction to trigger the cyclization. The photophysical and electrochemical properties of the resulting focused library of N-heteroheptacenes revealed that the electronic nature is controlled by the arene substituent while single crystals grown reveal that the packing motif is influenced by the N-substituent. Solution-processed thin-film OFET devices were fabricated with the N-heteroheptacenes, and one exhibited a hole-mobility of 0.02 cm2  V-1  s-1 .
© 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  C−H bond amination; N-heteroacenes; field effect transistor; nitrenes; rhodium

Year:  2017        PMID: 28719724     DOI: 10.1002/chem.201701966

Source DB:  PubMed          Journal:  Chemistry        ISSN: 0947-6539            Impact factor:   5.236


  1 in total

1.  Benzo[b]selenophene/thieno[3,2-b]indole-Based N,S,Se-Heteroacenes for Hole-Transporting Layers.

Authors:  Nadezhda S Demina; Nikolay A Rasputin; Roman A Irgashev; Alexey R Tameev; Natalia V Nekrasova; Gennady L Rusinov; Jean-Michel Nunzi; Valery N Charushin
Journal:  ACS Omega       Date:  2020-04-17
  1 in total

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