Literature DB >> 28681890

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment.

Min Hyuk Park1, Young Hwan Lee, Han Joon Kim, Tony Schenk, Woongkyu Lee, Keum Do Kim, Franz P G Fengler, Thomas Mikolajick, Uwe Schroeder, Cheol Seong Hwang.   

Abstract

The unexpected ferroelectric properties of nanoscale hafnia-zirconia are considered to be promising for a wealth of applications including ferroelectric memory, field effect transistors, and energy-related applications. However, the reason why the unexpected ferroelectric Pca21 phase can be stabilized has not been clearly understood although numerous extensive theoretical and experimental results have been reported recently. The ferroelectric orthorhombic phase is not a stable phase under processing conditions from the viewpoint of bulk free energy. Although the possibility of stabilization of the ferroelectric phase due to the surface energy effect has been theoretically suggested, such a theoretical model has not been systematically compared with actual experimental results. In this study, the experimental observations on polymorphism in nanoscale HfO2-ZrO2 solid solution thin films of a wide range of film compositions and thicknesses are comprehensively related to the theoretical predictions based on a thermodynamic surface energy model. The theoretical model can semi-quantitatively explain the experimental results on the phase-evolution, but there were non-negligible discrepancies between the two results. To understand these discrepancies, various factors such as the film stress, the role of a TiN capping layer, and the kinetics of crystallization are systematically studied. This work also reports on the evolution of electrical properties of the film, i.e. dielectric, ferroelectric, anti-ferroelectric, and morphotropic phase changes, as a function of the film composition and thickness. The in-depth analyses of the phase change are expected to provide an important guideline for subsequent studies.

Entities:  

Year:  2017        PMID: 28681890     DOI: 10.1039/c7nr02121f

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  7 in total

1.  Enhanced ferroelectricity in ultrathin films grown directly on silicon.

Authors:  Suraj S Cheema; Daewoong Kwon; Nirmaan Shanker; Roberto Dos Reis; Shang-Lin Hsu; Jun Xiao; Haigang Zhang; Ryan Wagner; Adhiraj Datar; Margaret R McCarter; Claudy R Serrao; Ajay K Yadav; Golnaz Karbasian; Cheng-Hsiang Hsu; Ava J Tan; Li-Chen Wang; Vishal Thakare; Xiang Zhang; Apurva Mehta; Evguenia Karapetrova; Rajesh V Chopdekar; Padraic Shafer; Elke Arenholz; Chenming Hu; Roger Proksch; Ramamoorthy Ramesh; Jim Ciston; Sayeef Salahuddin
Journal:  Nature       Date:  2020-04-22       Impact factor: 49.962

2.  Silicon Passivation by Ultrathin Hafnium Oxide Layer for Photoelectrochemical Applications.

Authors:  Laurynas Staišiūnas; Putinas Kalinauskas; Eimutis Juzeliūnas; Asta Grigucevičienė; Konstantinas Leinartas; Gediminas Niaura; Sandra Stanionytė; Algirdas Selskis
Journal:  Front Chem       Date:  2022-03-25       Impact factor: 5.221

3.  The Role of Zr on Monoclinic and Orthorhombic HfxZryO2 Systems: A First-Principles Study.

Authors:  Eleonora Pavoni; Elaheh Mohebbi; Pierluigi Stipa; Davide Mencarelli; Luca Pierantoni; Emiliano Laudadio
Journal:  Materials (Basel)       Date:  2022-06-13       Impact factor: 3.748

4.  Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing.

Authors:  Biyao Zhao; Yunting Yan; Jinshun Bi; Gaobo Xu; Yannan Xu; Xueqin Yang; Linjie Fan; Mengxin Liu
Journal:  Nanomaterials (Basel)       Date:  2022-08-30       Impact factor: 5.719

5.  A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors.

Authors:  Baek Su Kim; Seung Dam Hyun; Taehwan Moon; Keum Do Kim; Young Hwan Lee; Hyeon Woo Park; Yong Bin Lee; Jangho Roh; Beom Yong Kim; Ho Hyun Kim; Min Hyuk Park; Cheol Seong Hwang
Journal:  Nanoscale Res Lett       Date:  2020-04-07       Impact factor: 4.703

6.  Optimization of the In Situ Biasing FIB Sample Preparation for Hafnia-Based Ferroelectric Capacitor.

Authors:  Qilan Zhong; Yiwei Wang; Yan Cheng; Zhaomeng Gao; Yunzhe Zheng; Tianjiao Xin; Yonghui Zheng; Rong Huang; Hangbing Lyu
Journal:  Micromachines (Basel)       Date:  2021-11-24       Impact factor: 2.891

7.  Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film.

Authors:  Yan Cheng; Zhaomeng Gao; Kun Hee Ye; Hyeon Woo Park; Yonghui Zheng; Yunzhe Zheng; Jianfeng Gao; Min Hyuk Park; Jung-Hae Choi; Kan-Hao Xue; Cheol Seong Hwang; Hangbing Lyu
Journal:  Nat Commun       Date:  2022-02-03       Impact factor: 14.919

  7 in total

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