Literature DB >> 28676437

Deep brain stimulation and treatment-resistant obsessive-compulsive disorder: A systematic review.

Javier Vázquez-Bourgon1, Juan Martino2, María Sierra Peña3, Jon Infante Ceberio4, M Ángeles Martínez Martínez5, Roberto Ocón5, José Manuel Menchón6, Benedicto Crespo Facorro7, Alfonso Vázquez-Barquero2.   

Abstract

INTRODUCTION: At least 10% of patients with Obsessive-compulsive Disorder (OCD) are refractory to psychopharmacological treatment. The emergence of new technologies for the modulation of altered neuronal activity in Neurosurgery, deep brain stimulation (DBS), has enabled its use in severe and refractory OCD cases. The objective of this article is to review the current scientific evidence on the effectiveness and applicability of this technique to refractory OCD.
METHOD: We systematically reviewed the literature to identify the main characteristics of deep brain stimulation, its use and applicability as treatment for obsessive-compulsive disorder. Therefore, we reviewed PubMed/Medline, Embase and PsycINFO databases, combining the key-words 'Deep brain stimulation', 'DBS' and 'Obsessive-compulsive disorder' 'OCS'. The articles were selected by two of the authors independently, based on the abstracts, and if they described any of the main characteristics of the therapy referring to OCD: applicability; mechanism of action; brain therapeutic targets; efficacy; side-effects; co-therapies. All the information was subsequently extracted and analysed.
RESULTS: The critical analysis of the evidence shows that the use of DBS in treatment-resistant OCD is providing satisfactory results regarding efficacy, with assumable side-effects. However, there is insufficient evidence to support the use of any single brain target over another. Patient selection has to be done following analyses of risks/benefits, being advisable to individualize the decision of continuing with concomitant psychopharmacological and psychological treatments.
CONCLUSIONS: The use of DBS is still considered to be in the field of research, although it is increasingly used in refractory-OCD, producing in the majority of studies significant improvements in symptomatology, and in functionality and quality of life. It is essential to implement random and controlled studies regarding its long-term efficacy, cost-risk analyses and cost/benefit.
Copyright © 2017 SEP y SEPB. Publicado por Elsevier España, S.L.U. All rights reserved.

Entities:  

Keywords:  Deep brain stimulation; Estimulación cerebral profunda; Neurocirugía; Neurosurgery; Obsessive-compulsive disorder; Psicopatología; Psychopathology; Terapéutica; Therapeutics; Trastorno obsesivo-compulsivo

Mesh:

Year:  2017        PMID: 28676437     DOI: 10.1016/j.rpsm.2017.05.005

Source DB:  PubMed          Journal:  Rev Psiquiatr Salud Ment (Engl Ed)        ISSN: 2173-5050


  4 in total

Review 1.  Improving long term patient outcomes from deep brain stimulation for treatment-refractory obsessive-compulsive disorder.

Authors:  Andrew Guzick; Patrick J Hunt; Kelly R Bijanki; Sophie C Schneider; Sameer A Sheth; Wayne K Goodman; Eric A Storch
Journal:  Expert Rev Neurother       Date:  2019-11-22       Impact factor: 4.618

Review 2.  Therapeutic Neurostimulation in Obsessive-Compulsive and Related Disorders: A Systematic Review.

Authors:  Nicola Acevedo; Peter Bosanac; Toni Pikoos; Susan Rossell; David Castle
Journal:  Brain Sci       Date:  2021-07-19

3.  Deep Learning Provides Exceptional Accuracy to ECoG-Based Functional Language Mapping for Epilepsy Surgery.

Authors:  Harish RaviPrakash; Milena Korostenskaja; Eduardo M Castillo; Ki H Lee; Christine M Salinas; James Baumgartner; Syed M Anwar; Concetto Spampinato; Ulas Bagci
Journal:  Front Neurosci       Date:  2020-05-06       Impact factor: 4.677

Review 4.  A circuit view of deep brain stimulation in Alzheimer's disease and the possible mechanisms.

Authors:  Danfang Yu; Huanhuan Yan; Jun Zhou; Xiaodan Yang; Youming Lu; Yunyun Han
Journal:  Mol Neurodegener       Date:  2019-08-08       Impact factor: 14.195

  4 in total

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