Literature DB >> 28657751

Quantifying van der Waals Interactions in Layered Transition Metal Dichalcogenides from Pressure-Enhanced Valence Band Splitting.

Penghong Ci1,2,3, Yabin Chen1,2, Jun Kang2, Ryuji Suzuki4, Hwan Sung Choe1, Joonki Suh1, Changhyun Ko1, Taegyun Park1, Ke Shen1,3, Yoshihiro Iwasa4, Sefaattin Tongay5, Joel W Ager2, Lin-Wang Wang2, Junqiao Wu1,2,3.   

Abstract

van der Waals (vdW) forces, despite being relatively weak, hold the layers together in transition metal dichalcogenides (TMDs) and play a key role in their band structure evolution, hence profoundly affecting their physical properties. In this work, we experimentally probe the vdW interactions in MoS2 and other TMDs by measuring the valence band maximum (VBM) splitting (Δ) at K point as a function of pressure in a diamond anvil cell. As high pressure increases interlayer wave function coupling, the VBM splitting is enhanced in 2H-stacked MoS2 multilayers but, due to its specific geometry, not in 3R-stacked multilayers, hence allowing the interlayer contribution to be separated out of the total VBM splitting, as well as predicting a negative pressure (2.4 GPa) where the interlayer contribution vanishes. This negative pressure represents the threshold vdW interaction beyond which neighboring layers are electronically decoupled. This approach is compared to first-principles calculations and found to be widely applicable to other group-VI TMDs.

Entities:  

Keywords:  3R-stacked MoS2; diamond anvil cell; interlayer wave function coupling; spin−orbital coupling; van der Waals interaction

Year:  2017        PMID: 28657751     DOI: 10.1021/acs.nanolett.7b02159

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  4 in total

1.  Strain-tunable van der Waals interactions in few-layer black phosphorus.

Authors:  Shenyang Huang; Guowei Zhang; Fengren Fan; Chaoyu Song; Fanjie Wang; Qiaoxia Xing; Chong Wang; Hua Wu; Hugen Yan
Journal:  Nat Commun       Date:  2019-06-04       Impact factor: 14.919

2.  Tunable spin-polarized band gap in Si2/NiI2 vdW heterostructure.

Authors:  Douglas Duarte de Vargas; Rogério José Baierle
Journal:  RSC Adv       Date:  2020-03-02       Impact factor: 4.036

3.  Electron Density and Its Relation with Electronic and Optical Properties in 2D Mo/W Dichalcogenides.

Authors:  Pingping Jiang; Marie-Christine Record; Pascal Boulet
Journal:  Nanomaterials (Basel)       Date:  2020-11-08       Impact factor: 5.076

4.  Chemical trends of deep levels in van der Waals semiconductors.

Authors:  Penghong Ci; Xuezeng Tian; Jun Kang; Anthony Salazar; Kazutaka Eriguchi; Sorren Warkander; Kechao Tang; Jiaman Liu; Yabin Chen; Sefaattin Tongay; Wladek Walukiewicz; Jianwei Miao; Oscar Dubon; Junqiao Wu
Journal:  Nat Commun       Date:  2020-10-23       Impact factor: 17.694

  4 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.