| Literature DB >> 28657751 |
Penghong Ci1,2,3, Yabin Chen1,2, Jun Kang2, Ryuji Suzuki4, Hwan Sung Choe1, Joonki Suh1, Changhyun Ko1, Taegyun Park1, Ke Shen1,3, Yoshihiro Iwasa4, Sefaattin Tongay5, Joel W Ager2, Lin-Wang Wang2, Junqiao Wu1,2,3.
Abstract
van der Waals (vdW) forces, despite being relatively weak, hold the layers together in transition metal dichalcogenides (TMDs) and play a key role in their band structure evolution, hence profoundly affecting their physical properties. In this work, we experimentally probe the vdW interactions in MoS2 and other TMDs by measuring the valence band maximum (VBM) splitting (Δ) at K point as a function of pressure in a diamond anvil cell. As high pressure increases interlayer wave function coupling, the VBM splitting is enhanced in 2H-stacked MoS2 multilayers but, due to its specific geometry, not in 3R-stacked multilayers, hence allowing the interlayer contribution to be separated out of the total VBM splitting, as well as predicting a negative pressure (2.4 GPa) where the interlayer contribution vanishes. This negative pressure represents the threshold vdW interaction beyond which neighboring layers are electronically decoupled. This approach is compared to first-principles calculations and found to be widely applicable to other group-VI TMDs.Entities:
Keywords: 3R-stacked MoS2; diamond anvil cell; interlayer wave function coupling; spin−orbital coupling; van der Waals interaction
Year: 2017 PMID: 28657751 DOI: 10.1021/acs.nanolett.7b02159
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189