| Literature DB >> 28657748 |
Xiaochun Huang1,2, Jiaqi Guan1,2, Zijian Lin1, Bing Liu1,2, Shuya Xing1, Weihua Wang1, Jiandong Guo1,2,3.
Abstract
Tellurium (Te) films with monolayer and few-layer thickness are obtained by molecular beam epitaxy on a graphene/6H-SiC(0001) substrate and investigated by in situ scanning tunneling microscopy and spectroscopy (STM/STS). We reveal that the Te films are composed of parallel-arranged helical Te chains flat-lying on the graphene surface, exposing the (1 × 1) facet of (101̅0) of the bulk crystal. The band gap of Te films increases monotonically with decreasing thickness, reaching the near-infrared band for the monolayer Te. An explicit band bending at the edge between the monolayer Te and graphene substrate is visualized. With the thickness controlled in the atomic scale, Te films show potential applications of electronics and optoelectronics.Entities:
Keywords: Tellurium; helical chains; molecular beam epitaxy; optoelectronics; scanning tunneling microscopy; semiconducting band gap
Year: 2017 PMID: 28657748 DOI: 10.1021/acs.nanolett.7b01029
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189