Literature DB >> 28548857

Experimental Demonstration of Complete 180° Reversal of Magnetization in Isolated Co Nanomagnets on a PMN-PT Substrate with Voltage Generated Strain.

Ayan Kumar Biswas1, Hasnain Ahmad1, Jayasimha Atulasimha1, Supriyo Bandyopadhyay1.   

Abstract

Rotating the magnetization of a shape anisotropic magnetostrictive nanomagnet with voltage-generated stress/strain dissipates much less energy than most other magnetization rotation schemes, but its application to writing bits in nonvolatile magnetic memory has been hindered by the fundamental inability of stress/strain to rotate magnetization by full 180°. Normally, stress/strain can rotate the magnetization of a shape anisotropic elliptical nanomagnet by only up to 90°, resulting in incomplete magnetization reversal. Recently, we predicted that applying uniaxial stress sequentially along two different axes that are not collinear with the major or minor axis of the elliptical nanomagnet will rotate the magnetization by full 180°. Here, we demonstrate this complete 180° rotation in elliptical Co nanomagnets (fabricated on a piezoelectric substrate) at room temperature. The two stresses are generated by sequentially applying voltages to two pairs of shorted electrodes placed on the substrate such that the line joining the centers of the electrodes in one pair intersects the major axis of a nanomagnet at ∼ +30° and the line joining the centers of the electrodes in the other pair intersects at ∼ -30°. A finite element analysis has been performed to determine the stress distribution underneath the nanomagnets when one or both pairs of electrodes are activated, and this has been approximately incorporated into a micromagnetic simulation of magnetization dynamics to confirm that the generated stress can produce the observed magnetization rotations. This result portends an extremely energy-efficient nonvolatile "straintronic" memory technology predicated on writing bits in nanomagnets with electrically generated stress.

Keywords:  Straintronics; magneto-elastic switching; nanomagnets; piezoelectric

Year:  2017        PMID: 28548857     DOI: 10.1021/acs.nanolett.7b00439

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  3 in total

1.  Full voltage manipulation of the resistance of a magnetic tunnel junction.

Authors:  Aitian Chen; Yuelei Zhao; Yan Wen; Long Pan; Peisen Li; Xi-Xiang Zhang
Journal:  Sci Adv       Date:  2019-12-13       Impact factor: 14.136

2.  Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure.

Authors:  Yuanjun Yang; Zhenlin Luo; Shutong Wang; Wenyu Huang; Guilin Wang; Cangmin Wang; Yingxue Yao; Hongju Li; Zhili Wang; Jingtian Zhou; Yongqi Dong; Yong Guan; Yangchao Tian; Ce Feng; Yonggang Zhao; Chen Gao; Gang Xiao
Journal:  iScience       Date:  2021-06-17

3.  Bi-directional coupling in strain-mediated multiferroic heterostructures with magnetic domains and domain wall motion.

Authors:  Zhuyun Xiao; Roberto Lo Conte; Cai Chen; Cheng-Yen Liang; Abdon Sepulveda; Jeffrey Bokor; Gregory P Carman; Robert N Candler
Journal:  Sci Rep       Date:  2018-03-26       Impact factor: 4.379

  3 in total

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