| Literature DB >> 28546896 |
F Villani1, C Schiattarella2, T Polichetti1, R Di Capua2,3, F Loffredo1, B Alfano1, M L Miglietta1, E Massera1, L Verdoliva1, G Di Francia1.
Abstract
The extremely high sensitivity to the external environment and the high specific surface area, as well as the absence of bulk phenomena that could interfere with the response signal, make graphene highly attractive for the applications in the field of sensing. Among the various methods for producing graphene over large areas, liquid phase exfoliation (LPE) appears to be very promising, especially if combined with inkjet printing (IJP), which offers several advantages, including the selective and controlled deposition of small ink volumes and the versatility of the exploitable inks and substrates. Herein we present a feasibility study of chemiresistive gas sensors inkjet-printed onto paper substrates, in which a LPE graphene suspension dispersed in a water/isopropanol (H2O/IPA) mixture is used as sensing ink. The device performances, in terms of relative conductance variations, upon exposure to NO2 at standard ambient temperature and pressure, are analysed. In addition, we examine the effect of the substrate morphology and, more specifically, of the ink/substrate interaction on the device performances, by comparing the response of different chemiresistors fabricated by dispensing the same suspension also onto Al2O3 and Si/SiO2 substrates and carrying out a supportive atomic force microscopy analysis. The results prove the possibility to produce sensor devices by means of a wholly environmentally friendly, low-cost process that meets the requests coming from the increasing field of paper-based electronics and paving the way towards a flexible, green-by-design mass production.Entities:
Keywords: aqueous graphene dispersion; gas sensors; inkjet printing; liquid phase exfoliation; nitrogen dioxide; paper-based electronics
Year: 2017 PMID: 28546896 PMCID: PMC5433170 DOI: 10.3762/bjnano.8.103
Source DB: PubMed Journal: Beilstein J Nanotechnol ISSN: 2190-4286 Impact factor: 3.649
Figure 1Particle size distribution of the synthesized dispersed graphene in the prepared suspension measured by DLS.
Figure 2Pictures of the four investigated devices. D-P17 and D-P25 are the paper-based devices, while D-AO is the one printed on Al2O3 and D-SO is fabricated on Si/SiO2. The interdigitated electrodes have 8 fingers and 7 gaps; each finger is 250 μm wide and 4000 μm long, the gap between the fingers is 860 μm.
Figure 3I–V curve of a chemiresistor printed on paper (D-P17). Data are collected in the range [−5 V, 5 V].
Figure 4a) Dynamic responses of the paper-based devices (D-P17 blue line and D-P25 black line), exposed to 1 ppm NO2. The curves have been normalized to their base conductance value. b) Responses of the devices after four months. c) Response of D-P17 to three consecutive exposures to 1 ppm of NO2. d) Response of D-P17 to a sequence of NO2 injections at different concentrations. The inset shows the related sensitivity curve.
Figure 5Dynamic responses of the four investigated devices exposed to 1 ppm NO2. The curves have been normalized to their base conductance value. In the inset the magnification of the rising G for device D-SO and two related fit curves are shown. One fit (dotted line) is calculated with a pure exponential function, whereas the other (solid line) comes from a sum of an exponential function and a linear term.
Main features and estimated properties of the investigated devices.
| device | substrate | number of inkjet-printed layers | Δ | τ (s) | ||
| D-P17 | paper | 17 | 34 | 18.4% | 142 | 0.2 |
| D-P25 | paper | 25 | 20 | 10.9% | 118 | 1.5 |
| D-AO | Al2O3 | 31 | 30 | 36.6% | 97 | 1.9 |
| D-SO | Si/SiO2 | 38 | 15 | 26.8% | 25 | 5.4 |
Figure 6a) AFM image of the paper substrate (rms roughness: 12 nm). b,c) Typical AFM images on LPE graphene printed on paper (the images have been recorded on D-P17 (rms roughness: 21 nm) and D-P25 (rms roughness: 59 nm), respectively). d) Height profiles along the lines highlighted in the images of panels b) and c). e) Distribution of heights measured on the samples surfaces (relative counts are normalized to the peak value).
Figure 7a) AFM image of the Al2O3 substrate (rms roughness: 35 nm). b) AFM image of LPE graphene printed on Al2O3 in D-AO device (rms roughness: 120 nm); a height profile crossing the regular structures imaged on the surface is also reported. c) AFM image of the Si/SiO2 substrate (rms roughness: 0.7 nm). d) AFM image of LPE graphene printed on Si/SiO2 in D-SO device (rms roughness: 96 nm), a height profile crossing the regular structures imaged on the surface is also reported. e) Distribution of heights measured on the samples surfaces (relative counts are normalized to the peak value).