Nanostructure nitride light emitting diodes via the Talbot effect using improved colloidal photolithography.

We report here a new approach of Talbot effect based colloidal photolithography for fabricating nanostructure light emitting diodes (LEDs). By employing a rigid metal nanohole array template (RDT) as the diffraction grating and a polysiloxane-based spin on dielectric (SOD) as the thickness-controllable spacer layer, various InGaN/GaN nanostructure LEDs have been fabricated. Three-dimensional finite-difference time-domain (3D-FDTD) simulations have been conducted to verify the proposed approach. Photoluminescence (PL) and time-resolved photoluminescence (TRPL) have been performed to investigate the optical properties of the obtained nanostructure LEDs. Our report shows significance in fabricating two dimensional (2D) functional nanostructures and understanding the optical properties of various nanostructure InGaN/GaN LEDs.