| Literature DB >> 28525707 |
Qiuguo Li1,2, Xinzhou Ma2,3, Huiqiang Liu1,2, Zuxin Chen1,2, Hao Chen1,2, Sheng Chu2,3.
Abstract
Epitaxial two-dimensional GaTe nanosheets on ZnO nanowires were routinely prepared via a two-step chemical vapor deposition procedure. The epitaxial relationship and growth mechanism of the GaTe/ZnO core/shell structures were explored and attributed to a layer-overlayer model. The hybrid structures increased the surface area and the favorable p-n heterojunction enhanced the charge separation for photoelectrochemical performance in water splitting. The above synergistic effects boosted the photocurrent density from -0.3 mA cm-2 for the pristine ZnO nanowires to -2.5 mA cm-2 for the core/shell GaTe/ZnO nanowires at -0.39 V vs RHE under the visible light irradiation. This highlights the promise for utilization of GaTe nanosheet/ZnO nanowires as efficient photoelectrocatalyst for water splitting.Entities:
Keywords: GaTe; ZnO; p-n heterojunction; photoelectrochemical; two-dimensional nanosheet
Year: 2017 PMID: 28525707 DOI: 10.1021/acsami.7b04199
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229