| Literature DB >> 28508074 |
Binsong Li1, Kaifu Bian1, Xiaowang Zhou1, Ping Lu1, Sheng Liu1, Igal Brener1, Michael Sinclair1, Ting Luk1, Hattie Schunk1, Leanne Alarid1, Paul G Clem1, Zhongwu Wang2, Hongyou Fan1,3.
Abstract
Oriented attachment (OA) of synthetic nanocrystals is emerging as an effective means of fabricating low-dimensional nanoscale materials. However, OA relies on energetically favorable nanocrystal facets to grow nanostructured materials. Consequently, nanostructures synthesized through OA are generally limited to a specific crystal facet in their final morphology. We report our discovery that high-pressure compression can induce consolidation of spherical CdSe nanocrystal arrays, leading to unexpected one-dimensional semiconductor nanowires that do not exhibit the typical crystal facet. In particular, in situ high-pressure synchrotron x-ray scattering, optical spectroscopy, and high-resolution transmission electron microscopy characterizations indicate that by manipulating the coupling between nanocrystals through external pressure, a reversible change in nanocrystal assemblies and properties can be achieved at modest pressure. When pressure is increased above a threshold, these nanocrystals begin to contact one another and consolidate, irreversibly forming one-dimensional luminescent nanowires. High-fidelity molecular dynamics (MD) methods were used to calculate surface energies and simulate compression and coalescence mechanisms of CdSe nanocrystals. The MD results provide new insight into nanowire assembly dynamics and phase stability of nanocrystalline structures.Entities:
Keywords: Self-assembly; coalescence; nanocrystal; nanowire; oriented attachment; pressure; semiconductor nanowire; stress; superlattice
Year: 2017 PMID: 28508074 PMCID: PMC5419700 DOI: 10.1126/sciadv.1602916
Source DB: PubMed Journal: Sci Adv ISSN: 2375-2548 Impact factor: 14.136
Fig. 1CdSe nanowires synthesized by pressure-induced assembly.
(A) Representative TEM image of CdSe nanowires synthesized by pressure-induced assembly. The nanowire samples were collected after releasing the pressure from 15 GPa. Inset: CdSe nanowire bundles. More TEM images are provided in fig. S1. (B) HR-STEM image of the CdSe nanowires. Inset: Statistical analyses of crystallography of interfaces between nanocrystals. (C) Schematic model showing the coalescence of CdSe nanocrystals in random crystal orientations, as marked by the arrows. (D) Nanowires synthesized by compression of 6- and 8-nm nanoparticle arrays.
Fig. 2Pressure-induced structural evolution of CdSe nanocrystal mesophase during compression and release.
(A) Representative integrated data from WAXS images of CdSe nanocrystal arrays at varied pressures. (B) Representative integrated data from SAXS images of CdSe nanocrystal arrays at varied pressures. r is used to display the releasing pressure. Below 9.5 GPa, the HP-SAXS patterns are consistent with fcc mesophase. Mesophase transformation of the nanocrystal arrays starts at ~9.5 GPa, followed by an intermediate phase, where the overall distorted structures cannot be indexed by either fcc or 2D hexagonal mesophase. After releasing the applied pressure, the HP-SAXS patterns are consistent with 2D hexagonal mesophase. (C) The d111-spacings change with the pressure during compression and release. (D) d-spacing ratios (R) at different pressures. In the fcc nanocrystal mesophase, R = d311/d111; in the 2D hexagonal mesophase, R = d20/d10.
Fig. 3In situ UV-vis absorption spectra of CdSe nanocrystal arrays during compression and pressure release.
r is used to show the releasing pressure.
Fig. 4MD simulation of pressure-induced nanocrystal phase transition and consolidation.
(A) Initial configuration. (B) Intermediate configuration at pressure ~5 GPa. (C) Final configuration after pressure release. Two MD simulation cases of sintering showing (D) the formation of the <111>/<111> interface and (E) the formation of the <111>/<210> interface.