Spin-Hall Voltage over a Large Length Scale in Bulk Germanium.

We exploit the spin-Hall effect to generate a uniform pure spin current in an epitaxial n-doped Ge channel, and we detect the electrically induced spin accumulation, transverse to the injected charge current density, with polar magneto-optical Kerr microscopy at a low temperature. We show that a large spin density up to 400  μm^{-3} can be achieved at the edges of the 100-μm-wide Ge channel for an applied electric field lower than 5  mV/μm. We find that the spin density linearly decreases toward the center of the Ge bar, due to the large spin diffusion length, and such a decay is much slower than the exponential one observed in III-V semiconductors, allowing very large spin accumulations over a length scale of tens of micrometers. This lays the foundation for multiterminal spintronic devices, where different spin voltages can be exploited as inputs for magnetologic gates on the same Ge platform.