Tatjana Stoll1, Federico Branchi1, Julien Réhault1, Francesco Scotognella1,2, Francesco Tassone2, Ilka Kriegel3,4, Giulio Cerullo1. 1. IFN-CNR , Dipartimento di Fisica, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy. 2. Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia , Via Giovanni Pascoli, 70/3, 20133 Milano, Italy. 3. Department of Nanochemistry, Instituto Italiano di Tecnologia (IIT) , via Morego, 30, 16163 Genova, Italy. 4. Molecular Foundry, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Abstract
We use two-dimensional electronic spectroscopy (2DES) to disentangle the separate electron and hole relaxation pathways and dynamics of CdTe nanorods on a sub-100 fs time scale. By simultaneously exciting and probing the first three excitonic transitions (S1, S2, and S3) and exploiting the unique combination of high temporal and spectral resolution of 2DES, we derive a complete picture for the state-selective carrier relaxation. We find that hot holes relax from the 1Σ3/2 to the 1Σ1/2 state (S2 → S1) with 30 ± 10 fs time constant, and the hot electrons relax from the Σ' to the Σ state (S3 → S1) with 50 ± 10 fs time constant. This observation would not have been possible with conventional transient absorption spectroscopy due to the spectral congestion of the transitions and the very fast relaxation time scales.
We use two-dimensional electronic spectroscopy (2DES) to disentangle the separate electron and hole relaxation pathways and dynamics of CdTe nanorods on a sub-100 fs time scale. By simultaneously exciting and probing the first three excitonic transitions (S1, S2, and S3) and exploiting the unique combination of high temporal and spectral resolution of 2DES, we derive a complete picture for the state-selective carrier relaxation. We find that hot holes relax from the 1Σ3/2 to the 1Σ1/2 state (S2 → S1) with 30 ± 10 fs time constant, and the hot electrons relax from the Σ' to the Σ state (S3 → S1) with 50 ± 10 fs time constant. This observation would not have been possible with conventional transient absorption spectroscopy due to the spectral congestion of the transitions and the very fast relaxation time scales.
The interest in semiconductor
nanocrystals (NCs) has increased rapidly in the last three decades.[1] In these types of materials, the quantum confinement
effect leads to three peculiar physical phenomena: (i) the emergence
of discrete electronic levels, (ii) a shift of the energy gap depending
on the size of the NC, and (iii) the enhancement of the Coulomb interaction.[2,3] For these reasons, quantum-confined semiconducting NCs can be considered
as “artificial atoms”, which offer unique opportunities
for controlling electromagnetic energy at the nanoscale. Because of
their optical, electronic and transport properties, which can be finely
tuned by advanced synthetic approaches,[4] NCs have found application in a broad range of fields, including
optics,[5,6] photovoltaics,[7] sensing,[8] and electronics.[9] Highly complex hybrid nanostructures have been
synthesized for photovoltaic and photocatalytic applications,[10] where electron and hole contribute separately
to the photon-to-electron conversion efficiency. Understanding the
carrier relaxation dynamics is of key importance for the design and
optimization of such nanostructures.Spherical NCs of radii
of only a few nanometers have been extensively
studied in the past, the most widely investigated material being CdSe.[11−15] Femtosecond pump–probe spectroscopy is a powerful technique
to visualize the electron/hole relaxation pathways and dynamics in
real time. Investigations of the cooling dynamics of CdSe NCs as a
function of their radius revealed an acceleration of the relaxation
of the electron from the 1P to the 1S state with size reduction.[11,12,16−19] This observation is in contrast
with early theoretical work, predicting a slowdown of this decay process
due to the “phonon bottleneck” phenomenon, claiming
that for large electronic energy gaps relaxation occurs via interaction
with several longitudinal optical phonons of the material.[20−23] This discrepancy was resolved by the identification of an Auger
relaxation pathway, in which the hot electrons relax by transferring
their energy to the more closely spaced holes.[24−29] Hole relaxation dynamics, on the contrary, are difficult to extract
by conventional pump–probe spectroscopy: In fact, due to the
energetic congestion of the states, broadband excitation leads to
an overlap of their transient signals, while state-selective excitation
with narrowband pulses does not provide sufficient temporal resolution
to resolve the fast relaxation dynamics. To overcome this deficiency
with classical spectroscopy, ingenious approaches in excitation and
probing have been adopted. For instance, it was possible to extract
the 2S3/2 to 1S3/2 hole relaxation dynamics
in CdSe NCs only by modifying the crystal surface chemistry and thus
allowing the hole to be scavenged.[30] Pioneering
studies have addressed the question of separate electron and hole
pathways by employing an exciton selective approach to extract state-to-state
exciton dynamics;[12,16,18] however, they used indirect measurement techniques, such as subtractive
methods.[11,18]The emergence of two-dimensional electronic
spectroscopy (2DES)
techniques[31] has pushed the investigation
of the effects of quantum confinement on excitonic states even further.
2DES overcomes the limitations of pump–probe spectroscopy,
providing simultaneously high temporal and spectral resolution; it
can be seen as an extension of pump–probe with the extra capability
of resolving the excitation energy dependence of the transient absorption
signal. By spreading the information content along two frequency axes
(excitation and detection), it allows visualizing couplings and relaxation
processes between different transitions. 2DES has been employed to
study the quantum coherence of exciton states in CdSe NCs,[13−15] the electronic fine structure of PbS NCs,[32,33] and the state dynamics of CdSe NCs.[34]In this work we apply 2DES to the study of carrier dynamics
of
cadmium telluride (CdTe) nanorods (NRs), serving as model systems
for more complex nanostructures. CdTe is an excellent material for
photoenergy conversion, possessing a relatively low bandgap energy
of 1.6 eV in bulk and a high absorption cross section. NRs are quasi-1D
systems, with confined excitonic states and low degeneracy for hole
and electron states close to the band edge.[35] Furthermore, heterostructures of this material give the option to
spatially separate electron and hole to enhance the exciton dissociation
efficiency.[1,7,10] Our 2DES setup
has a spectral coverage sufficient to access the first three excitons
of the NRs simultaneously in excitation and detection and to elucidate
their relaxation dynamics and pathways. We show that 2DES provides
the unique capability to disentangle the exciton states and to distinguish
between electron and hole relaxation dynamics. Our results indicate
extremely fast time constants for hot hole relaxation, on the order
of 30 fs, and for hot electrons, on the order of ∼50 fs.CdTe NRs were synthesized as reported elsewhere.[36] Their transmission electron microscopy (TEM) image, shown
in the inset of Figure a, reveals a length of ∼21 nm and a diameter of 5 nm. Figure a shows the steady-state
absorption spectrum of a diluted colloidal solution of CdTe NRs in
toluene (i.e., ∼0.5 mg/mL). Within the investigated spectral
range three excitonic peaks are identified, around 1.8, 1.95, and
2.15 eV, indicated by the colored lines. Here the broad higher energetic
peaks (1.95 and 2.15 eV) are composed of several transitions that
do not necessarily have the same nature.[35] However, for simplicity, we will refer in the following to three
excitonic transitions S1, S2, and S3, respectively. The corresponding
electron and hole energy levels have been determined using band-structure
calculations within the effective mass approximation[37] and are shown in Figure b. Electron states are characterized by the angular
momentum of the envelope wave function m, with Σ
and Π symmetry for m = 0 and 1, respectively.
Holes are further characterized by their total angular momentum J in addition to a numbering
of states of the given symmetry.[35] A detailed
description of the electron and hole states and the assignment of
the linear absorption spectra can be found in ref (35) and in the Supporting Information (SI).
Figure 1
(a) Black solid line:
steady-state absorption spectrum of CdTe
NRs in toluene. The positions of the three lowest excitonic features
are indicated by colored lines. Green dashed line: laser pump spectrum
used for the 2DES experiments. A TEM image of the NRs, with average
dimensions of 21 nm length and 5 nm width, is shown in the inset.
(b) Energy level diagram for the CdTe NRs. Levels are detailed in
the text; the first three excitons are labeled S1–S3 and have
the same color code as in panel a.
(a) Black solid line:
steady-state absorption spectrum of CdTe
NRs in toluene. The positions of the three lowest excitonic features
are indicated by colored lines. Green dashed line: laser pump spectrum
used for the 2DES experiments. A TEM image of the NRs, with average
dimensions of 21 nm length and 5 nm width, is shown in the inset.
(b) Energy level diagram for the CdTe NRs. Levels are detailed in
the text; the first three excitons are labeled S1–S3 and have
the same color code as in panel a.Because of the high aspect ratio of the NRs (∼4),
all transitions
bear a 1D character peaking at the Γ point of the Brillouin
zone (k = 0). However,
ab initio calculations by Lee and Wang[38] in CdSe nanowires have shown that the S3 transition peaks away from
the Γ point (k ≠ 0) for both electrons and holes. Because of this peculiarity
the S3 transition is indicated in Figure b as Σ′ → Σ′.Our 2DES setup is described in detail elsewhere[39] and in the SI. In brief, it
works in the partially collinear pump–probe geometry, using
the Translating-Wedge-Based Identical Pulses eNcoding System (TWINS)
interferometer for the generation of the phase-locked excitation pulse
pair.[40] Two broadband noncollinear optical
parametric amplifiers are used to generate the pump and probe pulses,
with spectrum spanning the 1.7 to 2.3 eV range, allowing simultaneous
coverage of the S1, S2, and S3 transitions. The instrumental response
function (IRF) is well approximated by a Gaussian function with 15
fs full width at half-maximum.Figure shows a
series of 2DES maps of CdTe NRs in toluene, as a function of excitation
and detection energies, for different values of the waiting time t2 of 30, 60, 130, and 500 fs. In all maps the
signal plotted is the differential transmission (ΔT/T). The positions of the S1, S2, and S3 excitons
are indicated by dotted lines for both excitation and detection energies.
They have been deduced experimentally from the diagonal peaks in the
2DES maps at short t2 delays. It should
be noted that this method leads to slightly higher energetic positions
of S2 and S3 than in previous works.[35] In
a 2DES map the peaks on the diagonal (solid line), corresponding to
equal excitation and detection energies, probe the populations of
the individual transitions, while the cross peaks, corresponding to
different excitation and detection energies, probe couplings and relaxation
dynamics between electronic states. In particular, peaks on the upper
part of the diagonal, with excitation energy higher than detection
energy, correspond to relaxation dynamics of higher energetic excitons
to lower excitons or, in an electron/hole picture, to the relaxation
of hot electrons and holes. Peaks below the diagonal correspond to
coupling of excitonic states, for example, the excitation of a lower
energy state, leading to absorption change when probing a higher energy
state. The broad negative peaks (blue), in both the lower and upper
triangle, are a consequence of excited-state energy level shifts,
explained in detail in ref (35), largely related to the excitation-induced renormalization
of the transition energy due to Stark[17] or biexcitonic effects,[12,16] leading to a derivative
shape of the ΔT/T signal.
Figure 2
2DES maps
of CdTe NRs at waiting times t2 = 30,
60, 130, and 500 fs. Here red represents positive ΔT/T due to photobleaching and blue signifies
negative (photoinduced absorption) signals induced by transition energy
shifts.[35] The excitation energy scale has
been normalized by the pump laser spectrum, absolute color and contour
scale is set to the minimum and maximum intensity, and the excitation
pulse energy is 1.6 nJ corresponding to a fluence of 5 μJ/cm2. Dotted lines show the positions of the S1, S2, and S3 excitons
at excitation and detection energies, while the solid black line shows
the diagonal, where excitation and detection have equal energy.
2DES maps
of CdTe NRs at waiting times t2 = 30,
60, 130, and 500 fs. Here red represents positive ΔT/T due to photobleaching and blue signifies
negative (photoinduced absorption) signals induced by transition energy
shifts.[35] The excitation energy scale has
been normalized by the pump laser spectrum, absolute color and contour
scale is set to the minimum and maximum intensity, and the excitation
pulse energy is 1.6 nJ corresponding to a fluence of 5 μJ/cm2. Dotted lines show the positions of the S1, S2, and S3 excitons
at excitation and detection energies, while the solid black line shows
the diagonal, where excitation and detection have equal energy.At early waiting times t2 = 30 fs (upper
left panel in Figure ), both diagonal features and cross peaks are observed. Three distinct
positive peaks are visible on the diagonal, corresponding to the photobleaching
(PB) of the S1, S2, and S3 excitons. Already at t2 = 30 fs there are positive S2/S1 (excitation/detection)
and S3/S1 cross peaks (red) along the vertical at 1.8 eV detection
energy (dotted line S1). This implies that S3 and S2 have partially
relaxed to S1 over such a short time. The positive signal at the S1/S2
cross peak is due to the shared electron level of the two excitons
(see Figure b). At t2 = 60 and 130 fs (upper right and lower left
panel in Figure )
the amplitude of the S2/S1 and S3/S1 cross peaks grows, indicating
further relaxation of S2 and S3 to S1. The S2/S2 diagonal peak is
still discernible but much weaker with respect to shorter delays,
while the S3/S3 diagonal peak, which is expected to vanish upon relaxation,
does not decrease considerably in amplitude for t2 = 130 fs. For the much longer delay t2 = 500 fs (lower right panel), the 2DES maps appear to
be quite similar to t2 = 130 fs, suggesting
that most of the hot electron and hole dynamics occur on faster time
scales. This is also confirmed by the negative signal observed around
S3/S1, related to the excitation of higher excited states, and the
thus induced energy level shifts, which vanishes within the first
130 fs until it is absent at a longer delay of t2 = 500 fs.[35] The negative ΔT/T signal around detection energies of
∼2.05 eV (between S2 and S3 dotted vertical lines), together
with the positive signal at slightly higher detection energies, expands
over the entire excitation range and corresponds to the derivative
shape of the excitonic peak centered on S3, which is interpreted as
a red shift of the S3 energy level.[35] The
sign change over time from 30 to 500 fs of the ΔT/T signal in the upper triangle around S3/S3 is
assigned to the overlap of the faster positive dynamics due to PB
of S3 and the slower negative and positive dynamics induced by the
energy level shift of S3 and will be discussed in detail later.In the following we focus on the decay dynamics by monitoring different
peaks in the 2DES maps, corresponding to specific excitation and detection
energies. First we consider the dynamics involving the first and second
excitonic levels, S1 and S2, respectively. Figure displays the kinetic traces for the S1/S1
diagonal peak (a), the S2/S1 cross peak (b), the S1/S2 cross peak
(c), and the S2/S2 diagonal peak (d), see the grid lines in excitation
and detection axis of Figure for the positions of the different excitons. To retrieve
characteristic time constants, we fitted all dynamics by an exponential
rise and a one- or two-component exponential decay, convoluted with
the IRF. Following photoexcitation of the S1 state, in Figure a an instantaneous rise of
the S1/S1 diagonal peak is observed within our time resolution due
to occupation of the lowest electron and hole states. The shared electron
state Σ of the two excitons S1 and S2 leads to the instantaneous
rise also of the S1/S2 cross peak (Figure c). Because the S1 level is at the CdTe bandgap
(1Σ1/2 → Σ), there is no thermalization
of hot electrons or holes and the only observable dynamics for both
detection energies corresponds to electron and hole recombination.
The relatively fast picosecond dynamics observed are indicative of
nonradiative recombination or surface trapping, for electrons in the
case of Figure c (1Σ3/2→ Σ) and both electrons and holes in Figure a (1Σ1/2→ Σ), see insets, which have a comparable time constant
of ∼1.5 ps, in agreement with previous results.[35] Processes involving excitation of the S2 level
show a more complex relaxation behavior (Figure b,d). For detection at S1 (S2/S1 cross peak, Figure b) we resolve a delayed
rise of the PB signal, while detection of S2 (S2/S2 diagonal peak, Figure d) shows an instantaneous
rise followed by an initial fast decay. We find matching time constants
of 30 ± 10 fs for the rise in Figure b and the fast decay in Figure d, while the slower decay for
both peaks has again a time constant of ∼1.5 ps. Excitation
of S2 (1Σ3/2→ Σ, see inset in Figure ) creates an electron
state at the bandgap, while the hole is located at the first excited
state 1Σ3/2. The hole thermalizes to the 1Σ1/2 level on a fast time scale, leading to additional Pauli
blocking for the S1 transition and to the observed rise time of the
S2/S1 cross peak (Figure c). The same thermalization leads to a decrease in Pauli blocking
for the S2 transition and translates to the initial fast decay of
the S2/S2 diagonal peak, observed in Figure d. Indeed, the PB of the S2 transition shows
only about half the intensity after hole relaxation, indicative of
the contribution of the electron only to the bleach signal. The excellent
agreement between the time constants of the decay of the S2/S2 diagonal
peak and the buildup of the S2/S1 cross peak indicates that they uniquely
describe the relaxation of the hot hole from the 1Σ3/2 level to the 1Σ1/2 level. This process, which can
be clearly resolved with 2DES, would be difficult to directly observe
in a classical pump–probe experiment due to the proximity of
the two states in energy and the very fast time scale. The second,
slower decay then corresponds to the relaxation of the electron and
the hole from the bandgap on the previously discussed slow (picosecond)
time scale (extracted by excitation of S1, Figure a,c).
Figure 3
Experimental data (black points) and fit
(red line) of the ΔT/T signal
obtained from the 2DES maps
for selected excitation and detection energies, with S1 excitation
and S1 detection (a), S2 excitation and S1 detection (b), S1 excitation
and S2 detection (c), and S2 excitation and S2 detection (d). The
fit functions are an exponential rise followed by a monoexponential
decay (a–c) or a biexponential decay (d), all convoluted with
the IRF. The signals have been normalized to the maximum of the 2DES
maps of Figure . Energy
schemes are shown in the insets.
Experimental data (black points) and fit
(red line) of the ΔT/T signal
obtained from the 2DES maps
for selected excitation and detection energies, with S1 excitation
and S1 detection (a), S2 excitation and S1 detection (b), S1 excitation
and S2 detection (c), and S2 excitation and S2 detection (d). The
fit functions are an exponential rise followed by a monoexponential
decay (a–c) or a biexponential decay (d), all convoluted with
the IRF. The signals have been normalized to the maximum of the 2DES
maps of Figure . Energy
schemes are shown in the insets.We performed a similar analysis for S3 excitation (Σ′→
Σ′ transition, see insets in Figure ). It is worth mentioning that there is no
S1/S3 cross peak in the lower triangle of the 2DES maps, as the excitons
share no common state. The S3/S1 cross peak (see Figure a), corresponding to excitation
at S3 and detection at S1, shows a characteristic rise time of 49
± 10 fs, followed by a slower decay (1.5 ps time scale). The
S3/S3 diagonal peak (Figure c), on the contrary, has an instantaneous rise, followed by
a first exponential decay with 49 ± 10 fs time constant and a
second slower decay. Finally, by tuning the detection energy to S2
(S3/S2 cross peak, Figure b), we observe an almost instantaneous signal buildup followed
by a slow decay. The fast initial decay of S3/S3 is in excellent agreement
with the retarded buildup of the PB of S3/S1 cross peak (Figure a) and points to
S3 → S1 relaxation. This process could occur through either
the hot electron or the hot hole thermalization, that is, the energy
relaxation of the excited electron Σ′→ Σ,
or the excited hole, Σ′→ 1Σ1/2 (see insets in Figure a,c). (While we should strictly speak of relaxation of a correlated
electron–hole pair to an electron–hole pair state of
lower energy, here relaxation of just one excitonic component, either
electron or hole, is certainly faster than a concerted, simultaneous
electron and hole relaxation to the ground state. These concerted
channels are dominant only when the ones considered here are energetically
forbidden.)
Figure 4
Experimental
data (black points) and fits (red lines) of the ΔT/T signal obtained from the 2DES maps
for selected excitation and detection energies, exciting the S3 exciton
and detecting at S1 (a), S2 (b), and S3(c), together with the schemes
for state relaxation in the insets. A summary of the identified relaxation
pathways and respective time scales is shown in panel d.
Experimental
data (black points) and fits (red lines) of the ΔT/T signal obtained from the 2DES maps
for selected excitation and detection energies, exciting the S3 exciton
and detecting at S1 (a), S2 (b), and S3(c), together with the schemes
for state relaxation in the insets. A summary of the identified relaxation
pathways and respective time scales is shown in panel d.For a better understanding of the carrier relaxation
pathways,
we have to consider that when exciting the S3 exciton the ΔT/T signal presents both positive and negative
values (see 2DES maps in Figure ). We assign these variations to the overlap of PB
and a ΔT/T signal with derivative-shape
of the excitonic absorption peaks as a result of excitation-induced
renormalization of the transition energy due to Stark[17] or biexcitonic effects,[12,16] well established
for semiconducting nanostructures. This effect, which complicates
the extraction of the cross peak dynamics, is particularly strong
when pumping higher excitons.[35,41] To disentangle the
contributions of PB and Stark shift from the ΔT/T spectra, we developed a model, described in detail
in ref (35) and in
the SI. This model fits the entire ΔT/T spectra at all time delays with two
different spectral components: a series of Gaussian peaks having fixed
centers and widths, accounting for the PBs of the S1–S3 excitonic
transitions, and a series of derivatives of these Gaussians, accounting
for their spectral shifts (details in the SI). Examples of fits for short and long times are given in Figures
S2 and S3 in the SI. From this analysis
we extracted dynamics that separately account for the PB and the peak
shifts, allowing us to disentangle their contributions to the ΔT/T spectra (Figure S4 of the SI). We remark here that the fit parameters were
restricted to the amplitudes and the shifts of the peaks, as energy
values and the widths have been fixed to the values extracted from
the steady-state absorption spectra (see the SI). This procedure uncovers the pure PB dynamics that are the result
of the occupation of the respective electronic levels and gives direct
information on the carrier relaxation dynamics. The early time dynamics
of the PB for the S3 and S1 states are very similar to those extracted
from the cross peaks of the 2DES maps and display a decay and a rise
time, respectively, of 50 ± 10 fs. Remarkably, with this analysis
a similar 50 fs rise time is extracted for the PB signal of S2, as
opposed to the nearly instantaneous signal buildup directly observed
in the S2/S3 cross peak of the 2DES maps. This immediate signal change
is therefore assigned to an instantaneous shift of the S2 transition
due to excitation of the S3 state. For both S1 and S2 PB, we fit a
single exponential decay of 1.5 ps, in good agreement with the previously
discussed relaxation of electron and hole from the bandgap. This analysis
enables us to assign the charge relaxation pathways following S3 excitation:
The initial fast decay of the S3 PB correlates well with the delayed
rise of both S1 and S2 PB. Because S1 and S2 share the same electron
state (the ground state Σ, see insets), this process corresponds
to ultrafast relaxation of electrons from the Σ′ to the
Σ level, leading to a decrease in the S3 PB because of reduced
Pauli blocking and a corresponding increase in the S1/S2 PB. The hot
electron relaxation process thus appears to be slightly slower than
hot hole relaxation, although an improved signal-to-noise ratio of
the measurements will be necessary to precisely determine and differentiate
their dynamics.Taken together, these data allow us to draw
a detailed picture
of the separate ultrafast electron and hole dynamics and relaxation
pathways for the first three excitons of CdTe NRs (Figure d) and extract time constants
in the sub-100 fs time range. In particular, we directly observe a
hot hole thermalization from 1Σ3/2 to 1Σ1/2 in the range of 30 fs, while higher energetic electrons
after S3 pumping relax from Σ′ to Σ with 50 fs
time constant. Our results show that 2DES is an excellent tool for
the direct observation of electron and hole relaxation pathways in
excitonic systems occurring in the sub-100 fs time range due to the
unique combination of high temporal and spectral resolution in excitation
as well as in detection. We anticipate that 2DES, with its unique
ability to follow the ultrafast relaxation processes of excitonic
states, will be an important tool for the design of complex hybrid
nanostructures that aim to separately control the electron and hole
dynamics.