| Literature DB >> 28440271 |
Quanzheng Tao1, Martin Dahlqvist1, Jun Lu1, Sankalp Kota2, Rahele Meshkian1, Joseph Halim1, Justinas Palisaitis1, Lars Hultman1, Michel W Barsoum1,2, Per O Å Persson1, Johanna Rosen1.
Abstract
The exploration of two-dimensional solids is an active area of materials discovery. Research in this area has given us structures spanning graphene to dichalcogenides, and more recently 2D transition metal carbides (MXenes). One of the challenges now is to master ordering within the atomic sheets. Herein, we present a top-down, high-yield, facile route for the controlled introduction of ordered divacancies in MXenes. By designing a parent 3D atomic laminate, (Mo2/3Sc1/3)2AlC, with in-plane chemical ordering, and by selectively etching the Al and Sc atoms, we show evidence for 2D Mo1.33C sheets with ordered metal divacancies and high electrical conductivities. At ∼1,100 F cm-3, this 2D material exhibits a 65% higher volumetric capacitance than its counterpart, Mo2C, with no vacancies, and one of the highest volumetric capacitance values ever reported, to the best of our knowledge. This structural design on the atomic scale may alter and expand the concept of property-tailoring of 2D materials.Entities:
Year: 2017 PMID: 28440271 PMCID: PMC5413966 DOI: 10.1038/ncomms14949
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Figure 1In-plane chemical ordering of (Mo2/3Sc1/3)2AlC leading to Mo1.33C MXene with ordered divacancies.
(a) Schematic of (Mo2/3Sc1/3)2AlC before etching (left panel), after etching (middle panel) and after delamination (right panel). Background in the right panel shows the plane view of Mo1.33C MXene with ordered divacancies. (b–d) In-plane chemical ordering of the MAX phase evident from STEM images along the [010], [110] and [100] zone axis, respectively, with corresponding selected area electron diffraction (SAED). Schematics to the left of each image represent the corresponding atomic arrangements assuming the structure is the monoclinic space group C2/c (15). (e) Rietveld refinement of XRD of sample with nominal composition (Mo2/3Sc1/3)2AlC assuming same space group as above. (f) XRD pattern of (Mo2/3Sc1/3)2AlC before (black), after HF etching (red), and TBAOH intercalation (blue) and delamination (purple). Scale bars in (b–d) correspond to 1 nm.
Figure 2Top view of HAADF-STEM of single Mo1.33C sheet with ordered divacancies.
(a) Low-magnification image of single flake with lateral dimensions >1 μm. (b) Higher magnification, with the FFT of the original image in (a) shown in the inset. (c) Atomically resolved image with overlaid schematic atomic structure in comparison to (d) ideal atomic structure from theoretically simulated parent MAX phase. The scale in c,d is identical. Scale bar in a corresponds 200 nm and scale bar in b corresponds to 10 nm.
Figure 3Electrochemical performance of Mo1.33C in 1 M H2SO4.
Experiments were conducted in a three-electrode Swagelok cell. (a) Cyclic voltammograms of the 3 μm-thick electrode. (b) Scan rate dependence of specific capacitance of 3 and 12 μm thick free-standing electrodes. Also plotted are previous results on Ti3C2T clay14 and Mo2CT26 (c) b-values for a 3 μm-thick film. Inset plots log I versus log v (see equation (1) in text). (d) CV partition analysis showing capacitive contribution to total current at select scan rates.