| Literature DB >> 28430465 |
Cai-Zhi Xu1,2,3, Yang-Hao Chan4, Yige Chen5, Peng Chen1,2,3, Xiaoxiong Wang1,2,6, Catherine Dejoie7, Man-Hong Wong1,2, Joseph Andrew Hlevyack1,2, Hyejin Ryu3, Hae-Young Kee5, Nobumichi Tamura3, Mei-Yin Chou4,8,9, Zahid Hussain3, Sung-Kwan Mo3, Tai-Chang Chiang1,2,9.
Abstract
Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. Using angle-resolved photoemission spectroscopy, we have observed such bulk Dirac cones in epitaxially grown α-Sn films on InSb(111), the first such TDS system realized in an elemental form. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. A phase diagram is established that connects the 3D TDS phase through a singular point of a zero-gap semimetal phase to a topological insulator phase. The nature of the Dirac cone crosses over from 3D to 2D as the film thickness is reduced.Year: 2017 PMID: 28430465 DOI: 10.1103/PhysRevLett.118.146402
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161