Literature DB >> 28430415

Omnidirectional Harvesting of Weak Light Using a Graphene Quantum Dot-Modified Organic/Silicon Hybrid Device.

Meng-Lin Tsai1, Dung-Sheng Tsai1,2, Libin Tang3, Lih-Juann Chen4, Shu Ping Lau3, Jr-Hau He1.   

Abstract

Despite great improvements in traditional inorganic photodetectors and photovoltaics, more progress is needed in the detection/collection of light at low-level conditions. Traditional photodetectors tend to suffer from high noise when operated at room temperature; therefore, these devices require additional cooling systems to detect weak or dim light. Conventional solar cells also face the challenge of poor light-harvesting capabilities in hazy or cloudy weather. The real world features such varying levels of light, which makes it important to develop strategies that allow optical devices to function when conditions are less than optimal. In this work, we report an organic/inorganic hybrid device that consists of graphene quantum dot-modified poly(3,4-ethylenedioxythiophene) polystyrenesulfonate spin-coated on Si for the detection/harvest of weak light. The hybrid configuration provides the device with high responsivity and detectability, omnidirectional light trapping, and fast operation speed. To demonstrate the potential of this hybrid device in real world applications, we measured near-infrared light scattered through human tissue to demonstrate noninvasive oximetric photodetection as well as characterized the device's photovoltaic properties in outdoor (i.e., weather-dependent) and indoor weak light conditions. This organic/inorganic device configuration demonstrates a promising strategy for developing future high-performance low-light compatible photodetectors and photovoltaics.

Entities:  

Keywords:  PEDOT:PSS; graphene quantum dots; hybrid; omnidirectional; weak light

Year:  2017        PMID: 28430415     DOI: 10.1021/acsnano.6b08567

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  2 in total

1.  Memory phototransistors based on exponential-association photoelectric conversion law.

Authors:  Zhibin Shao; Tianhao Jiang; Xiujuan Zhang; Xiaohong Zhang; Xiaofeng Wu; Feifei Xia; Shiyun Xiong; Shuit-Tong Lee; Jiansheng Jie
Journal:  Nat Commun       Date:  2019-03-20       Impact factor: 14.919

2.  Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light.

Authors:  Xiaomei Yao; Xutao Zhang; Tingting Kang; Zhiyong Song; Qiang Sun; Dongdong Wei; Jin Zou; Pingping Chen
Journal:  Nanoscale Res Lett       Date:  2021-01-21       Impact factor: 4.703

  2 in total

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