| Literature DB >> 28409810 |
Jun Zheng, Suyuan Wang, Hui Cong, Colleen S Fenrich, Zhi Liu, Chunlai Xue, Chuanbo Li, Yuhua Zuo, Buwen Cheng, James S Harris, Qiming Wang.
Abstract
A high-quality Ge<sub>0.88</sub>Si<sub>0.08</sub>Sn<sub>0.04</sub>/Ge<sub>0.94</sub>Sn<sub>0.06</sub> multiple quantum well (MQW) structure was grown on a Ge (001) substrate by sputtering epitaxy. The MQW structure was characterized by high-resolution x-ray diffraction and transmission electron microscopy. Surface-illuminated Ge<sub>0.88</sub>Si<sub>0.08</sub>Sn<sub>0.04</sub>/Ge<sub>0.94</sub>Sn<sub>0.06</sub> MQW pin photodetectors were fabricated with cutoff wavelengths of up to 2140 nm. The analysis of transitions from spectral response was fitted well with the theoretical calculations. Results suggest that sputtering epitaxy is a promising method for preparing high-quality low-dimensional Sn-based group IV materials and that Ge<sub>1-x-y</sub>Si<sub>y</sub>Sn<sub>x</sub>/Ge<sub>1-x</sub>Sn<sub>x</sub> MQWs have potential applications in the development of efficient Si-based photonic devices.Year: 2017 PMID： 28409810 DOI： 10.1364/OL.42.001608
Source DB: PubMed Journal: Opt Lett ISSN： 0146-9592 Impact factor: 3.776