Literature DB >> 28396603

Ferroelectric tunnel junctions: Crossing the wall.

Evgeny Y Tsymbal1, Julian P Velev2.   

Abstract

Year:  2017        PMID: 28396603     DOI: 10.1038/nnano.2017.60

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


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  3 in total

1.  Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels.

Authors:  Igor Stolichnov; Ludwig Feigl; Leo J McGilly; Tomas Sluka; Xian-Kui Wei; Enrico Colla; Arnaud Crassous; Konstantin Shapovalov; Petr Yudin; Alexander K Tagantsev; Nava Setter
Journal:  Nano Lett       Date:  2015-11-24       Impact factor: 11.189

2.  Conduction at domain walls in oxide multiferroics.

Authors:  J Seidel; L W Martin; Q He; Q Zhan; Y-H Chu; A Rother; M E Hawkridge; P Maksymovych; P Yu; M Gajek; N Balke; S V Kalinin; S Gemming; F Wang; G Catalan; J F Scott; N A Spaldin; J Orenstein; R Ramesh
Journal:  Nat Mater       Date:  2009-01-25       Impact factor: 43.841

3.  Magnetic domain-wall racetrack memory.

Authors:  Stuart S P Parkin; Masamitsu Hayashi; Luc Thomas
Journal:  Science       Date:  2008-04-11       Impact factor: 47.728

  3 in total
  1 in total

1.  Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit.

Authors:  Shuoguo Yuan; Xin Luo; Hung Lit Chan; Chengcheng Xiao; Yawei Dai; Maohai Xie; Jianhua Hao
Journal:  Nat Commun       Date:  2019-04-16       Impact factor: 14.919

  1 in total

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