Literature DB >> 28368631

Strain-Gradient Position Mapping of Semiconductor Quantum Dots.

P-L de Assis1,2, I Yeo1,3, A Gloppe1, H A Nguyen1, D Tumanov1, E Dupont-Ferrier1, N S Malik3, E Dupuy3, J Claudon3, J-M Gérard3, A Auffèves1, O Arcizet1, M Richard1, J-Ph Poizat1.   

Abstract

We introduce a nondestructive method to determine the position of randomly distributed semiconductor quantum dots (QDs) integrated in a solid photonic structure. By setting the structure in an oscillating motion, we generate a large stress gradient across the QDs plane. We then exploit the fact that the QDs emission frequency is highly sensitive to the local material stress to map the position of QDs deeply embedded in a photonic wire antenna with an accuracy ranging from ±35  nm down to ±1  nm. In the context of fast developing quantum technologies, this technique can be generalized to different photonic nanostructures embedding any stress-sensitive quantum emitters.

Year:  2017        PMID: 28368631     DOI: 10.1103/PhysRevLett.118.117401

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Resonant driving of a single photon emitter embedded in a mechanical oscillator.

Authors:  Mathieu Munsch; Andreas V Kuhlmann; Davide Cadeddu; Jean-Michel Gérard; Julien Claudon; Martino Poggio; Richard J Warburton
Journal:  Nat Commun       Date:  2017-07-14       Impact factor: 14.919

2.  Strain-induced control of a pillar cavity-GaAs single quantum dot photon source.

Authors:  Inah Yeo; Doukyun Kim; Il Ki Han; Jin Dong Song
Journal:  Sci Rep       Date:  2019-12-06       Impact factor: 4.379

  2 in total

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