| Literature DB >> 28358305 |
Arash Takshi1, Houman Yaghoubi2, Jing Wang3, Daniel Jun4, J Thomas Beatty5.
Abstract
Due to the high internal quantum efficiency, reaction center (RC) proteins from photosynthetic organisms have been studied in various bio-photoelectrochemical devices for solar energy harvesting. In vivo, RC and cytochrome c (cyt c; a component of the biological electron transport chain) can form a cocomplex via interprotein docking. This mechanism can be used in vitro for efficient electron transfer from an electrode to the RC in a bio-photoelectrochemical device. Hence, the success rate in coupling RCs to cyt c is of great importance for practical applications in the future. In this work, we use an electrochemical transistor to study the binding of the RC to cytochrome. The shift in the transistor threshold voltage was measured in the dark and under illumination to estimate the density of cytochrome and coupled RCs on the gate of the transistor. The results show that ~33% of the cyt cs on the transistor gate were able to effectively couple with RCs. Due to the high sensitivity of the transistor, the approach can be used to make photosensors for detecting low light intensities.Entities:
Keywords: bio-photosensor; charge density; protein-protein interaction; reaction center; rhodobacter sphaeroides
Mesh:
Substances:
Year: 2017 PMID: 28358305 PMCID: PMC5487958 DOI: 10.3390/bios7020016
Source DB: PubMed Journal: Biosensors (Basel) ISSN: 2079-6374
Figure 1(a) Energy diagram demonstrating the charge circulation inside a reaction center (RC) and the interactions with cyt c and methyl viologen. (b) A schematic of an RC. The cavity indicates the cytochrome docking site. (c) A schematic of the electrochemical device. The device was characterized in dark and light by measuring I while applying voltages to V and V. The structure of the immobilized proteins using a linker on the surface of Si3N4 is shown in the zoomed-in box.
Figure 2(a) Output and (b) transconductance (at V = 1.0 V) characteristics of the transistor in the dark for the bare device, with the SAM linker layer, and immobilized cytochrome on the gate insulator (Si3N4). (Inset) √I − V at V = 1.0 V used for estimating C and V.
Figure 3(a) Output and (b) transconductance (at V = 1.0 V) characteristics of the transistor with the linker+cyt c+RC on top of the gate under dark and light conditions. (Inset in (b)) The linear approximation to √I − V for the device in the dark and under illumination of white and monochromatic lights.
Figure 4The absorption spectrum of the RC and the results from ΔV under the tested wavelengths.