In the three sterically congested silanes, C24H38Si2 (1) (1,1,2,2-tetra-isopropyl-1,2-di-phenyl-disilane), C24H34Br4Si2 (2) [1,1,2,2-tetra-kis-(2-bromo-propan-2-yl)-1,2-di-phenyl-disilane] and C32H38Si2 (3) (1,2-di-tert-butyl-1,1,2,2-tetra-phenyl-disilane), the Si-Si bond length is shortest in (1) and longest in (2), with (3) having an inter-mediate value, which parallels the increasing steric congestion. A comparison of the two isopropyl derivatives, (1 and 2), shows a significant increase in the Si-C(ipso) distance with the introduction of bromine. Also, in the brominated compound 2, attractive inter-molecular Br⋯Br inter-actions exist with Br⋯Br separations ca 0.52 Å shorter than the sum of the van der Waals radii. In compound 2, one of the bromo-isopropyl groups is rotationally disordered in an 0.8812 (9):0.1188 (9) ratio. Compound 3 exhibits 'whole mol-ecule' disorder in a 0.9645 (7):0.0355 (7) ratio with the Si-Si bonds in the two components making an angle of ca 66°.
In the three sterically congested silanes, C24H38Si2 (1) (1,1,2,2-tetra-isopropyl-1,2-di-phenyl-disilane), C24H34Br4Si2 (2) [1,1,2,2-tetra-kis-(2-bromo-propan-2-yl)-1,2-di-phenyl-disilane] and C32H38Si2 (3) (1,2-di-tert-butyl-1,1,2,2-tetra-phenyl-disilane), the Si-Si bond length is shortest in (1) and longest in (2), with (3) having an inter-mediate value, which parallels the increasing steric congestion. A comparison of the two isopropyl derivatives, (1 and 2), shows a significant increase in the Si-C(ipso) distance with the introduction of bromine. Also, in the brominated compound 2, attractive inter-molecular Br⋯Br inter-actions exist with Br⋯Br separations ca 0.52 Å shorter than the sum of the van der Waals radii. In compound 2, one of the bromo-isopropyl groups is rotationally disordered in an 0.8812 (9):0.1188 (9) ratio. Compound 3 exhibits 'whole mol-ecule' disorder in a 0.9645 (7):0.0355 (7) ratio with the Si-Si bonds in the two components making an angle of ca 66°.
The study of tetraisopropyl- and tetrakis(2-bromopropan-2-yl)-substituted disilanes is of interest due to their importance in the synthesis of bis(silanes), which are precursors for generating transient disilynes (Pichaandi et al., 2011 ▸; Kabe et al., 2000 ▸; Ando et al., 1997 ▸). The synthesis of 1,1,2,2-tetraisopropyl-1,2-di-tert-butyldisilane and 1,1,2,2-tetrakis(2-bromopropan-2-yl)-1,2-di-tert-butyldisilane were recently reported by our group (Pichaandi et al., 2011 ▸) and the crystal structure of the former determined. However, the structure of the latter could not be solved due to its highly disordered nature, so the exact nature of the influence of the bromine atom in the isopropyl group on the disilane structure could not be determined. We report here a comparison of the structures of 1,1,2,2-tetraisopropyl-1,2-diphenyldisilane (1) and 1,1,2,2-tetrakis(2-bromopropan-2-yl)-1,2-diphenyldisilane (2), as well as that of the related 1,2-di-tert-butyl-1,1,2,2-tetraphenyldisilane (3).
Structural commentary
The asymmetric unit for 1 consists of two independent molecules (Fig. 1 ▸), one having an anticlinal conformation and the other a gauche conformation about the Si—Si bond. Thus, the torsion angle defined by the Si—Si bond and the ipso carbon atoms of the phenyl groups are −140.15 (5)° (C2—Si1—Si2—C19) for the former and 59.58 (6)° (C31—Si3—Si4—C43) for the latter. In contrast, the two independent molecules in the low-temperature form of 1,1,2,2-tetra-tert-butyl-1,2-diphenyldisilane both adopt the gauche arrangement with corresponding torsion angles of −71.47 (9) and −68.61 (9)° (Scholz et al., 2014 ▸). Disilane 2 (Fig. 2 ▸) has a gauche conformation with the corresponding torsion angle being 75.55 (5)° (C7—Si1—Si2—C19). The gauche conformation in 2 appears to be preferred over other conformations when the rotational barrier around the Si—Si bond is high. This trend is observed in the crowded 1,1,2,2-tetraisopropyl-1,2-di-tert-butyldisilane (Pichaandi et al., 2011 ▸) and 1,1,2,2-tetra-tert-butyl-1,2-diphenyldisilane (Lerner et al., 2001 ▸), which both exhibit a gauche conformation. However, the sterically less hindered 1,1,2,2-tetra-tert-butyl-1,2-dichlorodisilane (Peters et al., 1998 ▸) and tetra-tert-butyl-1,2-dihydroxydisilane (West & Pham, 1991 ▸) have an anticlinal conformation, similar to 1. The higher rotational barrier in 2 comes from the presence of the bulky bromoisopropyl group.
Figure 1
Perspective view of the two independent molecules of 1, with labeling scheme and 50% probability displacement ellipsoids.
Figure 2
Perspective view of 2, with labeling scheme and 50% probability displacement ellipsoids. Only the major orientation of the disordered bromoisopropyl group is shown.
Compound 3 has crystallographically imposed centrosymmetry and so adopts a staggered conformation (Fig. 3 ▸). Interestingly, in this crystal there is an example of ‘whole molecule’ disorder with 4% of the contents of the asymmetric unit adopting an orientation in which the Si—Si bond is inclined by approximately 66° to that of the major component. Since this work was undertaken, the structure of 3 has been reported by two different groups (Monakhov et al., 2010 ▸; Wei et al., 2014 ▸), but only mentioned cursorily and with no discussion of structural details. The Si—Si bond lengths in 1–3 are, respectively, 2.3898 (4), 2.4746 (10) and 2.4002 (6) Å, significantly longer than the typical values for less-congested disilanes, e.g. 2.340 (9) Å in hexamethyldisilane (Beagley et al., 1971 ▸). The longest compares favorably with those found in the sterically congested disilanes 1,1,2,2-tetraisopropyl-1,2-di-tert-butyldisilane [2.4787 (6) Å; Pichaandi et al., 2011 ▸] and 1,1,2,2-tetra-tert-butyl-1,2-diphenyldisilane [2.4973 (8) Å; Lerner et al., 2001 ▸; Scholz et al., 2014 ▸], but is shorter than that in the extremely congested hexa-tert-butyldisilane [2.6863 (5) Å; Scholz et al., 2014 ▸]. The effects of the steric congestion are also seen in the Si—C bond lengths, e.g. Si1—C2 = 1.9005 (12) Å in 1, Si1—C1 = 1.965 (3) Å in 2 and Si1—C13 = 1.9226 (12) Å in 3, all of which are significantly longer than a typical Si—C single bond (1.87 Å; Sheldrick, 1989 ▸). Additionally, the significant increase in the quoted Si—C bond length between 2 and 1 indicates the increase in steric congestion on brominating the isopropyl group.
Figure 3
Perspective view of 3, with labeling scheme and 50% probability displacement ellipsoids. Only the major orientation of the disorder is shown [symmetry code: (i) 2 − x, −y, −z].
Supramolecular features
In 1, the packing consists of layers two molecules thick which are parallel to (001) with only normal van der Waals contacts between molecules (Fig. 4 ▸). In 2, the molecules form chains running parallel to the b-axis direction through weak C—H⋯Br hydrogen bonds (see Table 1 ▸). These chains pair up through Br4⋯Br4 (−x + 1, −y + 1, −z + 1) interactions, where the Br⋯Br separation of 3.1755 (7) Å is 0.52 Å shorter than the sum of the van der Waals radii (3.70 Å) (see Fig. 5 ▸). We consider these to be attractive interactions as has been argued previously (Desiraju & Parthasarthy, 1989 ▸). Only normal van der Waals contacts occur between the double chains. The primary intermolecular interaction in 3 is a C—H⋯π interaction (see Table 2 ▸), which forms chains running parallel to the c-axis direction (Fig. 6 ▸).
Figure 4
Packing of 1, viewed along the b-axis direction.
Table 1
Hydrogen-bond geometry (Å, °) for 2
D—H⋯A
D—H
H⋯A
D⋯A
D—H⋯A
C15—H15C⋯Br1i
0.98
2.82
3.771 (3)
166
Symmetry code: (i) .
Figure 5
Packing of 2, viewed along the a-axis direction, with the C—H⋯Br hydrogen bonds (Table 1 ▸) shown as black dotted lines and Br⋯Br interactions as brown dotted lines.
Table 2
Hydrogen-bond geometry (Å, °) for 3
Cg1 is the centroid of C1–C6 the ring.
D—H⋯A
D—H
H⋯A
D⋯A
D—H⋯A
C15—H15C⋯Cg1i
0.98
2.93
3.8955 (14)
171
Symmetry code: (i) .
Figure 6
Packing of 3, viewed along the b-axis direction, with the C—H⋯π(ring) interactions (Table 2 ▸) shown as dotted lines.
Database survey
There are 390 structures of disilanes containing only Si—C bonds to the substituents in the Cambridge Crystallographic Database (CSD, V5.38, last update November, 2016; Groom et al., 2016 ▸), but in only 43 of these is the Si—Si distance greater than 2.40 Å. In this set, the distances range from 2.401 (2) Å in 4 (Kyushin et al., 1996 ▸) (Fig. 7 ▸). to 2.6863 (5) Å in one structure of hexa-tert-butyldisilane (Scholz et al., 2014 ▸). In addition to the four reported structures of hexa-tert-butyldisilane (Scholz et al., 2012 ▸, 2014 ▸; Wiberg et al., 1986 ▸; Wiberg & Niedermayer, 2000 ▸), but excluding the five examples where it is co-crystallized with [NaOR]4 (Lerner et al., 2002 ▸), [SnR]6 (Wiberg et al., 1999 ▸), [SiR]4 (Wiberg et al., 1993 ▸; Meyer-Wegner et al., 2009 ▸) and [GeR]4 (Wiberg et al., 1996 ▸) [R = Si(t-Bu)3 in all cases], only four other molecules have Si—Si distances greater than 2.5 Å. These are 5 [2.5149 (13) Å; Kabe et al., 2000 ▸), Ph6Si2 as a solid solution with Ph6Pb2 [2.519 (4) Å; Kleiner & Dräger, 1984 ▸], 6 [2.5428 (18) Å; Gottschling et al., 2005 ▸] and 7 [2.6468 (9) Å; Goetze et al., 1997 ▸] (Fig. 7 ▸).
Figure 7
Compounds from the database survey.
Synthesis and crystallization
Disilanes 1 and 2 were prepared according to the literature procedures (Lambert & Urdaneta-Perez, 1978 ▸; Pichaandi et al., 2011 ▸). Colorless crystals of 1 and 2 were obtained from hexane and dichloromethane solutions, respectively. To prepare 3, a 50 ml Schlenk flask was loaded with tert-butyldiphenylchlorosilane (10 g, 37 mmol), finely cut Li wire (0.26 g, 0.038 g-atom) and 20 ml of THF under nitrogen and the mixture was stirred overnight at 298 K. The reaction mixture was then diluted with 350 ml of CH2Cl2 and dilute HCl (10 ml) and 20 ml of water were added. The organic layer was then separated from the aqueous layer, dried with MgSO4 and the solvent removed in vacuo to give 3 as a white powder. Crystals suitable for X-ray diffraction were obtained from CH2Cl2 solution (yield 8.1 g, 94%). 1H NMR (δ, CD2Cl2) 0.76–1.02 (s, 18H) 7.27–7.52 (m, 12H) 7.65–7.85 (m, 8H); 13C{1H} NMR (δ, CD2Cl2) 20.0, 28.8, 127.8, 128.9, 136.6, 137.5; 29Si{1H} NMR (δ, CD2Cl2) −13.5.
Refinement
Crystal data, data collection and structure refinement details are summarized in Table 3 ▸. In compound 2, the bromoisopropyl group containing Br4 is rotationally disordered about the Si2—C16 axis in an 0.8812 (9):0.1188 (9) ratio. The two components of the disorder were refined with restraints that their geometries be comparable to one another and to those of the other three bromoisopropyl groups. Compound 3 exhibits ‘whole molecule’ disorder in a 0.9645 (7):0.0355 (7) ratio with the Si—Si bonds in the two components making an angle of ca 66°. The alternate location of the unique Si atom was obtained from a difference Fourier map and its inclusion in the structure-factor calculation allowed enough atoms of its phenyl groups to be located so that these could be completed and refined as rigid hexagons. Following this, the remaining atoms of the minor component could be located and they were refined with restraints that the geometry be comparable with that of the major component. In all three structures, the H atoms were included as riding contributions in idealized positions: C—H = 0.95–0.98 Å with U
iso(H) = 1.5U
eq(C-methyl) and 1.2U
eq(C) for other H atoms.
Table 3
Experimental details
1
2
3
Crystal data
Chemical formula
C24H38Si2
C24H34Br4Si2
C32H38Si2
Mr
382.72
698.33
478.80
Crystal system, space group
Monoclinic, P21/n
Monoclinic, P21/c
Monoclinic, P21/c
Temperature (K)
100
100
100
a, b, c (Å)
19.8418 (14), 8.2554 (6), 28.454 (2)
8.8779 (7), 10.4042 (8), 29.699 (2)
8.5622 (5), 10.2107 (6), 15.4586 (10)
β (°)
97.838 (1)
90.975 (1)
95.452 (1)
V (Å3)
4617.3 (6)
2742.8 (4)
1345.37 (14)
Z
8
4
2
Radiation type
Mo Kα
Mo Kα
Mo Kα
μ (mm−1)
0.16
5.97
0.15
Crystal size (mm)
0.22 × 0.19 × 0.14
0.14 × 0.12 × 0.07
0.17 × 0.15 × 0.13
Data collection
Diffractometer
Bruker SMART APEX CCD
Bruker SMART APEX CCD
Bruker SMART APEX CCD
Absorption correction
Multi-scan (SADABS; Bruker, 2016 ▸)
Multi-scan (SADABS; Bruker, 2016 ▸)
Multi-scan (SADABS; Bruker, 2016 ▸)
Tmin, Tmax
0.96, 0.98
0.49, 0.69
0.98, 0.98
No. of measured, independent and observed [I > 2σ(I)] reflections
81051, 12375, 10320
47392, 6875, 5471
23513, 3566, 3065
Rint
0.046
0.052
0.031
(sin θ/λ)max (Å−1)
0.696
0.669
0.693
Refinement
R[F2 > 2σ(F2)], wR(F2), S
0.036, 0.096, 1.03
0.028, 0.062, 1.03
0.034, 0.092, 1.06
No. of reflections
12375
6875
3566
No. of parameters
485
287
179
No. of restraints
0
38
43
H-atom treatment
H-atom parameters constrained
H-atom parameters constrained
H-atom parameters constrained
Δρmax, Δρmin (e Å−3)
0.39, −0.29
1.00, −1.05
0.38, −0.29
Computer programs: APEX3 and SAINT (Bruker, 2016 ▸), SHELXT (Sheldrick, 2015a
▸), SHELXL2014 (Sheldrick, 2015b
▸), DIAMOND (Brandenburg & Putz, 2012 ▸) and SHELXTL (Sheldrick, 2008 ▸).
Crystal structure: contains datablock(s) 1, 2, 3, global. DOI: 10.1107/S2056989017002602/su5352sup1.cifStructure factors: contains datablock(s) 1. DOI: 10.1107/S2056989017002602/su53521sup2.hklStructure factors: contains datablock(s) 2. DOI: 10.1107/S2056989017002602/su53522sup3.hklStructure factors: contains datablock(s) 3. DOI: 10.1107/S2056989017002602/su53523sup4.hklClick here for additional data file.Supporting information file. DOI: 10.1107/S2056989017002602/su53521sup5.cmlClick here for additional data file.Supporting information file. DOI: 10.1107/S2056989017002602/su53522sup6.cmlClick here for additional data file.Supporting information file. DOI: 10.1107/S2056989017002602/su53523sup7.cmlCCDC references: 1532770, 1532769, 1532768Additional supporting information: crystallographic information; 3D view; checkCIF report
Primary atom site location: structure-invariant direct methods
Least-squares matrix: full
Secondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.036
Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.096
H-atom parameters constrained
S = 1.03
w = 1/[σ2(Fo2) + (0.0424P)2 + 1.8169P] where P = (Fo2 + 2Fc2)/3
12375 reflections
(Δ/σ)max = 0.002
485 parameters
Δρmax = 0.39 e Å−3
0 restraints
Δρmin = −0.29 e Å−3
Experimental. The diffraction data were obtained from 3 sets of 400 frames,
each of width 0.5° in ω, colllected at φ = 0.00,
90.00 and 180.00° and 2 sets of 800 frames, each of
width 0.45° in φ, collected at ω = –30.00 and 210.00°.
The scan time was 15 sec/frame.
Geometry. All esds (except the esd in the dihedral angle between two l.s. planes)
are estimated using the full covariance matrix. The cell esds are taken
into account individually in the estimation of esds in distances, angles
and torsion angles; correlations between esds in cell parameters are only
used when they are defined by crystal symmetry. An approximate (isotropic)
treatment of cell esds is used for estimating esds involving l.s. planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and
goodness of fit S are based on F2, conventional R-factors R are based
on F, with F set to zero for negative F2. The threshold expression of
F2 > 2sigma(F2) is used only for calculating R-factors(gt) etc. and is
not relevant to the choice of reflections for refinement. R-factors based
on F2 are statistically about twice as large as those based on F, and R-
factors based on ALL data will be even larger. H-atoms attached to carbon
were placed in calculated positions (C—H = 0.95 - 1.00 Å). All were
included as riding contributions with isotropic displacement parameters
1.2 - 1.5 times those of the attached atoms.
Primary atom site location: structure-invariant direct methods
Least-squares matrix: full
Secondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.028
Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.062
H-atom parameters constrained
S = 1.03
w = 1/[σ2(Fo2) + (0.0222P)2 + 2.5797P] where P = (Fo2 + 2Fc2)/3
6875 reflections
(Δ/σ)max = 0.001
287 parameters
Δρmax = 1.00 e Å−3
38 restraints
Δρmin = −1.05 e Å−3
Experimental. The diffraction data were obtained from 3 sets of 400 frames,
each of width 0.5° in ω, colllected at φ = 0.00,
90.00 and 180.00° and 2 sets of 800 frames, each of
width 0.45° in φ, collected at ω = –30.00 and 210.00°.
The scan time was 20 sec/frame.
Geometry. All esds (except the esd in the dihedral angle between two l.s. planes)
are estimated using the full covariance matrix. The cell esds are taken
into account individually in the estimation of esds in distances, angles
and torsion angles; correlations between esds in cell parameters are only
used when they are defined by crystal symmetry. An approximate (isotropic)
treatment of cell esds is used for estimating esds involving l.s. planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and
goodness of fit S are based on F2, conventional R-factors R are based
on F, with F set to zero for negative F2. The threshold expression of
F2 > 2sigma(F2) is used only for calculating R-factors(gt) etc. and is
not relevant to the choice of reflections for refinement. R-factors based
on F2 are statistically about twice as large as those based on F, and R-
factors based on ALL data will be even larger. H-atoms attached to carbon
were placed in calculated positions (C—H = 0.95 - 0.98 Å). All were
included as riding contributions with isotropic displacement parameters
1.2 - 1.5 times those of the attached atoms. The bromodimethyl group based
on C16 is rotationally disordered over two nearly superimposable sites
in an 88:12 ratio. The two components of the disorder were refined
subject to restraints that their geometries be comparable.
Primary atom site location: structure-invariant direct methods
Least-squares matrix: full
Secondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.034
Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.092
H-atom parameters constrained
S = 1.06
w = 1/[σ2(Fo2) + (0.0409P)2 + 0.5552P] where P = (Fo2 + 2Fc2)/3
3566 reflections
(Δ/σ)max = 0.001
179 parameters
Δρmax = 0.38 e Å−3
43 restraints
Δρmin = −0.29 e Å−3
Experimental. The diffraction data were obtained from 3 sets of 400 frames,
each of width 0.5° in ω, colllected at φ = 0.00,
90.00 and 180.00° and 2 sets of 800 frames, each of
width 0.45° in φ, collected at ω = –30.00 and 210.00°.
The scan time was 20 sec/frame.
Geometry. All esds (except the esd in the dihedral angle between two l.s. planes)
are estimated using the full covariance matrix. The cell esds are taken
into account individually in the estimation of esds in distances, angles
and torsion angles; correlations between esds in cell parameters are only
used when they are defined by crystal symmetry. An approximate (isotropic)
treatment of cell esds is used for estimating esds involving l.s. planes.
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and
goodness of fit S are based on F2, conventional R-factors R are based
on F, with F set to zero for negative F2. The threshold expression of
F2 > 2sigma(F2) is used only for calculating R-factors(gt) etc. and is
not relevant to the choice of reflections for refinement. R-factors based
on F2 are statistically about twice as large as those based on F, and R-
factors based on ALL data will be even larger. H-atoms attached to carbon
were placed in calculated positions (C—H = 0.95 - 0.98 Å). All were
included as riding contributions with isotropic displacement parameters
1.2 - 1.5 times those of the attached atoms. The centrosymmetric molecule
is disordered over two orientations about the center in a 96:4 ratio. The
two components of the disorder were refined subject to restraints that
their geometries be comparable. In addition, the phenyl ring of the minor
component overlapping with one from the major component was refined as a
rigid hexagon.