| Literature DB >> 28295998 |
Valeryia Kasneryk1,2, Mariya Shamzhy1, Maksym Opanasenko1,2, Paul S Wheatley3, Samuel A Morris3, Samantha E Russell3, Alvaro Mayoral4, Michal Trachta5, Jiří Čejka1, Russell E Morris3,2.
Abstract
The assembly-disassembly-organization-reassembly (ADOR) process has been used to disassemble a parent zeolite with the UOV structure type and then reassemble the resulting layers into a novel structure, IPC-12. The structure of the material has previously been predicted computationally and confirmed in our experiments using X-ray diffraction and atomic resolution STEM-HAADF electron microscopy. This is the first successful application of the ADOR process to a material with porous layers.Entities:
Keywords: ADOR; germanosilicates; isoreticular materials; structure rearrangement; zeolites
Year: 2017 PMID: 28295998 PMCID: PMC5396290 DOI: 10.1002/anie.201700590
Source DB: PubMed Journal: Angew Chem Int Ed Engl ISSN: 1433-7851 Impact factor: 15.336
Figure 1The predicted ADOR process starting with the disassembly (D) of a parent UOV zeolite into layered intermediates by removal of the d4r units, followed by the organization and reassembly steps (O/R) into the final material. Note that the process should not affect the structure of the layers themselves (as is seen in the top view), which means the intralayer unit cell parameters (b and c) remain constant but the interlayer unit cell parameter (a) decreases throughout the process.
Figure 2The XRD patters of the initial UOV and intermediates recovered after 5, 30, and 60 minutes of hydrolysis in 12 m HCl, together with the final material after treatment for 1 day. It is clear that the positions of those reflections with h=0 are approximately invariant during the process while those with h≠0 are significantly shifted, which is consistent with the predicted ADOR process for UOV shown in Figure 1.
Figure 3Final plot showing the observed (experimental) synchrotron X‐ray diffraction data (crosses), and the calculated XRD pattern (solid line) from the final Rietveld refinement, together with the difference between the two. Tick marks indicate the position of Bragg reflections.
Figure 4a) A view of the crystallographic model of IPC‐12 viewed in the ab projection, showing the pseudo hexagonal arrangement of 12‐ring channels b) Atomic resolution spherical aberration (C) corrected STEM‐HAADF images of IPC‐12 in the same bc projection as (a) illustrating the presence of the same arrangement of 12‐ring channels in the real material. c) STEM‐HAADF image of IPC‐12 viewed in the ab projection showing the arrangement of layers in the final material, with an interlayer separation of about 10.5 Å (d). A view of the crystallographic model in the same ab projection showing the same arrangement of layers as in (c).