Literature DB >> 28274091

Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition.

Xingwei Ding1,2, Cunping Qin2, Jiantao Song1, Jianhua Zhang3,4, Xueyin Jiang5, Zhilin Zhang1,5.   

Abstract

Entities:  

Year:  2017        PMID： 28274091      PMCID： PMC5340739          DOI： 10.1186/s11671-017-1927-x

Source DB:  PubMed          Journal:  Nanoscale Res Lett        ISSN： 1556-276X            Impact factor:   4.703


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Erratum

The original publication [1] is missing the funding information in the acknowledgement. The missing part can be found here: “This work was funded by National Key Basic Research Program of China (2015CB655005) and Science and Technology Commission of Shanghai Municipality Program (14DZ228090).”
  1 in total

1.  The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition.

Authors:  Xingwei Ding; Cunping Qin; Jiantao Song; Jianhua Zhang; Xueyin Jiang; Zhilin Zhang
Journal:  Nanoscale Res Lett       Date:  2017-01-23       Impact factor: 4.703
  1 in total

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