Literature DB >> 28261713

Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array.

Ya-Xiong Zhou1, Yi Li, Yu-Ting Su, Zhuo-Rui Wang, Ling-Yi Shih, Ting-Chang Chang, Kuan-Chang Chang, Shi-Bing Long, Simon M Sze, Xiang-Shui Miao.   

Abstract

Resistive random access memory (RRAM) based reconfigurable logic provides a temporal programmable dimension to realize Boolean logic functions and is regarded as a promising route to build non-von Neumann computing architecture. In this work, a reconfigurable operation method is proposed to perform nonvolatile sequential logic in a HfO2-based RRAM array. Eight kinds of Boolean logic functions can be implemented within the same hardware fabrics. During the logic computing processes, the RRAM devices in an array are flexibly configured in a bipolar or complementary structure. The validity was demonstrated by experimentally implemented NAND and XOR logic functions and a theoretically designed 1-bit full adder. With the trade-off between temporal and spatial computing complexity, our method makes better use of limited computing resources, thus provides an attractive scheme for the construction of logic-in-memory systems.

Entities:  

Year:  2017        PMID: 28261713     DOI: 10.1039/c7nr00934h

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  3 in total

1.  Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation.

Authors:  Xinxin Zhang; Ling Xu; Hui Zhang; Jian Liu; Dingwen Tan; Liangliang Chen; Zhongyuan Ma; Wei Li
Journal:  Nanoscale Res Lett       Date:  2020-01-15       Impact factor: 4.703

2.  Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO2-based resistive switching memory for neuromorphic applications.

Authors:  Sobia Ali Khan; Sungjun Kim
Journal:  RSC Adv       Date:  2020-08-24       Impact factor: 4.036

3.  Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

Authors:  Weifan He; Huajun Sun; Yaxiong Zhou; Ke Lu; Kanhao Xue; Xiangshui Miao
Journal:  Sci Rep       Date:  2017-08-30       Impact factor: 4.379

  3 in total

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