| Literature DB >> 28256630 |
Hongwei Tao1, Min Zhou1, Kangli Wang1, Shijie Cheng1, Kai Jiang1.
Abstract
Carbon coated TiO2 (TiO2@C) is fabricated by a convenient and green one-pot solvothermal method, in which ethylene glycol serve as both the reaction medium and carbon source without the addition of any other carbon additives. During the solvothermal process, ethylene glycol polymerize and coordinate with Ti4+ to form the polymeric ligand precursor, then the polymer brushes carbonize and convert to homogeneous carbon layer firmly anchored on the TiO2 nanoparticles (~1 nm thickness). The polymerization and carbonization process of the ethylene glycol is confirmed by FT-IR, Raman, TG and TEM characterizations. Benefiting from the well-dispersed nanoparticles and uniform carbon coating, the as-prepared TiO2@C demonstrate a high reversible capacity of 317 mAh g-1 (94.6% of theoretical value), remarkable rate capability of 125 mAh g-1 at 3.2 A g-1 and superior cycling stability over 500 cycles, possibly being one of the highest capacities reported for TiO2.Entities:
Year: 2017 PMID: 28256630 PMCID: PMC5335553 DOI: 10.1038/srep43895
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Schematic illustration of the synthesis of TiO2@C nanoparticles.
Figure 2Physical characterizations of the TiO2@C and TiO2: (a) XRD pattern, (b) Raman spectra and (c) N2 adsorption–desorption isotherm of TiO2@C and TiO2; (d) TGA curve of TiO2@C.
Figure 3Morphological features of the TiO2@C and TiO2 particles: (a) SEM image of TiO2; (b) SEM image of TiO2@C; (c) TEM images and (d) high resolution TEM image of TiO2@C.
Figure 4Electrochemical characterizations of the TiO2@C electrode: (a) CV curves obtained at a scan rate of 0.5 mV s;−1 (b) charge-discharge profiles at a current rate of 0.05 A g−1 in the first 50 cycles; (c) cycling performance at a constant current of 0.05 A g;−1 (d) rate capability at various current rates from 0.05 A g−1 to 6.4 A g;−1 (e) long-term cycling performances at a constant current density of 400 mA g−1.