| Literature DB >> 28240247 |
Wen Qi1, Haihua Zhao1,2, Ying Wu1, Hong Zeng1, Tao Tao3, Chao Chen3, Chunjiang Kuang1, Shaoxiong Zhou1, Yunhui Huang2.
Abstract
Recently, metal phosphides have been investigated as potential anode materials because of higher specific capacity compared with those of carbonaceous materials. However, the rapid capacity fade upon cycling leads to poor durability and short cycle life, which cannot meet the need of lithium-ion batteries with high energy density. Herein, we report a layer-structured GeP3/C nanocomposite anode material with high performance prepared by a facial and large-scale ball milling method via in-situ mechanical reaction. The P-O-C bonds are formed in the composite, leading to close contact between GeP3 and carbon. As a result, the GeP3/C anode displays excellent lithium storage performance with a high reversible capacity up to 1109 mA h g-1 after 130 cycles at a current density of 0.1 A g-1. Even at high current densities of 2 and 5 A g-1, the reversible capacities are still as high as 590 and 425 mA h g-1, respectively. This suggests that the GeP3/C composite is promising to achieve high-energy lithium-ion batteries and the mechanical milling is an efficient method to fabricate such composite electrode materials especially for large-scale application.Entities:
Year: 2017 PMID: 28240247 PMCID: PMC5327472 DOI: 10.1038/srep43582
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Synthesis and characterization of GeP3/C: (a) schematic illustration of ball milling process from red P, GeO2 and carbon; (b) XRD patterns of GeP3 and GeP3/C; (c) Raman spectra of GeP3 and GeP3/C.
Figure 2(a) SEM image of GeP3/C; (b) typical TEM image of GeP3/C; (c) HRTEM image of GeP3/C, the inset is the selected area electron diffraction (SAED); (d–g) TEM image and corresponding elemental mappings of Ge, P and C.
Figure 3(a) FT-IR spectra of black P and GeP3/C; (b) high-resolution XPS P2p spectrum of GeP3/C.
Figure 4(a) CV curves of GeP3/C obtained at a scan rate of 0.01 mV s−1; (b) ex-situ XRD pattern of GeP3 after 1st discharge at a current density of 0.01 A g−1; (c) selected charge/discharge curves of GeP3/C at 0.1 A g−1; (d) cycling performance and (e) rate capability of GeP3 and GeP3/C (the specific capacity is calculated based on the whole electrode); (f) EIS curves of GeP3 and GeP3/C before cycling. The inset is the equivalent circuit model for the simulation.