| Literature DB >> 28234544 |
Shuigang Xu1, Junying Shen1, Gen Long1, Zefei Wu1, Zhi-Qiang Bao2, Cheng-Cheng Liu2, Xiao Xiao1, Tianyi Han1, Jiangxiazi Lin1, Yingying Wu1, Huanhuan Lu1, Jianqiang Hou1, Liheng An1, Yuanwei Wang1, Yuan Cai1, K M Ho1, Yuheng He1, Rolf Lortz1, Fan Zhang2, Ning Wang1.
Abstract
We fabricate high-mobility p-type few-layer WSe_{2} field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level crossing effects at ultralow coincident angles, revealing that the Zeeman energy is about 3 times as large as the cyclotron energy near the valence band top at the Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe_{2}, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe_{2} offers a unique platform with unusually heavy hole carriers and a substantially enhanced g factor for exploring strongly correlated phenomena.Entities:
Year: 2017 PMID: 28234544 DOI: 10.1103/PhysRevLett.118.067702
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161