| Literature DB >> 28186118 |
Benjamin T Hogan1,2, Sergey A Dyakov3, Lorcan J Brennan4, Salma Younesy1,5, Tatiana S Perova6,7, Yurii K Gun'ko4,7, Monica F Craciun1, Anna Baldycheva1,6.
Abstract
In this work, we propose a novel approach for wafer-scale integration of 2D materials on CMOS photonic chip utilising methods of synthetic chemistry and microfluidics technology. We have successfully demonstrated that this approach can be used for integration of any fluid-dispersed 2D nano-objects on silicon-on-insulator photonics platform. We demonstrate for the first time that the design of an optofluidic waveguide system can be optimised to enable simultaneous in-situ Raman spectroscopy monitoring of 2D dispersed flakes during the device operation. Moreover, for the first time, we have successfully demonstrated the possibility of label-free 2D flake detection via selective enhancement of the Stokes Raman signal at specific wavelengths. We discovered an ultra-high signal sensitivity to the xyz alignment of 2D flakes within the optofluidic waveguide. This in turn enables precise in-situ alignment detection, for the first practicable realisation of 3D photonic microstructure shaping based on 2D-fluid composites and CMOS photonics platform, while also representing a useful technological tool for the control of liquid phase deposition of 2D materials.Entities:
Year: 2017 PMID: 28186118 PMCID: PMC5301493 DOI: 10.1038/srep42120
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1A CMOS photonic circuit coupled to a microfluidic layer integrating dynamically reconfigurable 2D material metastructures by exploiting liquid crystal technology. In-situ micro-Raman spectroscopy detection and monitoring gives information on the formation of the metastructures.
Figure 2(a) Map showing regions where both the D and G bands of 2D carbon-based materials are determined numerically to be strongly enhanced in Raman spectroscopy measurements. (b) Expanded view of the region of interest highlighted in a. The range of parameters for which strong enhancement is observed are shown with the white lines including fabrication deviation Δh and Δw.
Figure 3(a) SEM image of the chip used for Raman measurements, before infiltration with the nanocomposite. (b) Polarised microscopy image of the structure infiltrated with a composite of MLC 6608 and graphene oxide. Integration of the composite, including GO flakes, into all microfluidic structures on the chip can be seen. (c) SEM of GO flakes infiltrated with a host LC into a 3.6 μm channel. (d) SEM of GO flakes infiltrated with a host LC into an 11.6 μm channel. (e) SEM of an 11.6 μm channel, with the LC removed, showing the integration of large numbers of GO flakes.
Figure 4(a,b) Normalized Raman spectra showing the enhancement of the D and G bands for graphene oxide dispersed in (a) liquid crystal MLC 6608 and (b) liquid crystal E7. Spectra are shown for three microfluidic geometries: in (c) an infiltration reservoir of width 100 μm (magenta), in (d) a microfluidic cavity of width 11.6 μm (green) and in (e) amicrofluidic cavity of width 3.6 μm (black). Approximate laser spot sizes are shown in (c–e). (f) Comparison of numerically determined (solid lines) and experimentally measured (points) Raman intensities of the graphene oxide D (blue) and G (red) bands. All data is normalized to the case where the walls are separated by a distance great enough for Fabry-Pérot resonances to have no effect.
Figure 5(a) GO flake movement induced by the Raman laser. Each image represents the change after 10 s exposure time in the order in which they were observed. (b) Raman spectra of a GO flake dispersed in liquid crystal E7 within a narrow channel (approx. 3.6 μm) at positions 1 (cyan), 2 (violet) and 5 (grey) as seen in a. (c–d) The variation of the Raman intensity of the GO D (blue) and G (red) bands for lateral (c) and vertical (d) displacements of a GO flake within the microfluidic channel. Solid lines give the numerically determined Raman intensities. Flake positions determined from normalized experimental spectra are shown as points. For lateral displacements, the error in the experimental measurement is given by the size of the symbols.