| Literature DB >> 28181313 |
Amanuel M Berhane1, Kwang-Yong Jeong2, Zoltán Bodrog3, Saskia Fiedler1, Tim Schröder2, Noelia Vico Triviño2, Tomás Palacios2, Adam Gali3, Milos Toth1, Dirk Englund2, Igor Aharonovich1.
Abstract
Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.Entities:
Keywords: cubic inclusions; gallium nitride wafer; narrow linewidth; point defects; single-photon sources
Year: 2017 PMID: 28181313 DOI: 10.1002/adma.201605092
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849